Infineon Technologies IPB80N06S2L09ATMA1
- Part Number:
- IPB80N06S2L09ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854112-IPB80N06S2L09ATMA1
- Description:
- MOSFET N-CH 55V 80A TO263-3
- ECAD Model:
-
- Datasheet:
- IPB80N06S2L09ATMA1
Infineon Technologies IPB80N06S2L09ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S2L09ATMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max190W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.2m Ω @ 52A, 10V
- Vgs(th) (Max) @ Id2V @ 125μA
- Input Capacitance (Ciss) (Max) @ Vds2620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.011Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)370 mJ
- RoHS StatusROHS3 Compliant
IPB80N06S2L09ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 370 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2620pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 80A.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPB80N06S2L09ATMA1 Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 320A.
a 55V drain to source voltage (Vdss)
IPB80N06S2L09ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S2L09ATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 370 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2620pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 80A.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPB80N06S2L09ATMA1 Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 320A.
a 55V drain to source voltage (Vdss)
IPB80N06S2L09ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S2L09ATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
The three parts on the right have similar specifications to IPB80N06S2L09ATMA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodePbfree CodeTerminal FinishSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusView Compare
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IPB80N06S2L09ATMA1Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Discontinued1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAINN-Channel8.2m Ω @ 52A, 10V2V @ 125μA2620pF @ 25V80A Tc105nC @ 10V55V4.5V 10V±20V80A0.011Ohm320A55V370 mJROHS3 Compliant---------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Obsolete1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-Channel4.7m Ω @ 80A, 10V2V @ 250μA5000pF @ 25V80A Tc190nC @ 10V55V4.5V 10V±20V80A0.0062Ohm320A55V700 mJRoHS Compliante3yesMatte Tin (Sn)FET General Purpose PowerNOT SPECIFIEDcompliantNOT SPECIFIED4Not Qualified
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Discontinued1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAINN-Channel8.8m Ω @ 50A, 10V4V @ 125μA2360pF @ 25V80A Tc80nC @ 10V55V10V±20V80A0.0088Ohm320A55V370 mJROHS3 Compliant---------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010Discontinued1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE158W TcENHANCEMENT MODEDRAINN-Channel10.7m Ω @ 60A, 10V2V @ 93μA2075pF @ 25V80A Tc80nC @ 10V55V4.5V 10V±20V80A0.0147Ohm320A55V280 mJROHS3 Compliant---------
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