Infineon Technologies IKW30N60H3FKSA1
- Part Number:
- IKW30N60H3FKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587281-IKW30N60H3FKSA1
- Description:
- IGBT 600V 60A 187W TO247-3
- Datasheet:
- IKW30N60H3FKSA1
Infineon Technologies IKW30N60H3FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW30N60H3FKSA1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop®
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation187W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part Number*KW30N60
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max187W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time38 ns
- Collector Emitter Breakdown Voltage600V
- Turn On Time50 ns
- Test Condition400V, 30A, 10.5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
- Turn Off Time-Nom (toff)262 ns
- IGBT TypeTrench Field Stop
- Gate Charge165nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C21ns/207ns
- Switching Energy1.38mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKW30N60H3FKSA1 Description
The IKW30N60H3FKSA1 is a High-speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IKW30N60H3FKSA1 Features
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Very low VCEsat
Low EMI
Very soft, fast recovery anti-parallel diode
IKW30N60H3FKSA1 Applications
Uninterruptible power supplies
Welding converters
Converters with high switching frequency
Switched Mode Power Supply
AC and DC motor drives
The IKW30N60H3FKSA1 is a High-speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IKW30N60H3FKSA1 Features
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Very low VCEsat
Low EMI
Very soft, fast recovery anti-parallel diode
IKW30N60H3FKSA1 Applications
Uninterruptible power supplies
Welding converters
Converters with high switching frequency
Switched Mode Power Supply
AC and DC motor drives
IKW30N60H3FKSA1 More Descriptions
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3 Tab) TO-247 Tube
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
IGBT DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
IGBT DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
The three parts on the right have similar specifications to IKW30N60H3FKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLead FreeHalogen FreeSwitching FrequencyView Compare
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IKW30N60H3FKSA116 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop®2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)187WNOT SPECIFIEDNOT SPECIFIED*KW30N603Not Qualified1SingleStandard187WPOWER CONTROLN-CHANNEL600V60A38 ns600V50 ns400V, 30A, 10.5 Ω, 15V2.4V @ 15V, 30A262 nsTrench Field Stop165nC120A21ns/207ns1.38mJROHS3 CompliantLead Free---
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14 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™ 52013e3yesActive1 (Unlimited)3EAR99Tin (Sn)227WNOT SPECIFIEDNOT SPECIFIED---1SingleStandard227WPOWER CONTROLN-CHANNEL650V85A100 ns650V44 ns400V, 30A, 10 Ω, 15V1.35V @ 15V, 30A520 ns-168nC120A33ns/308ns470μJ (on), 1.35mJ (off)ROHS3 CompliantLead FreeHalogen Free50Hz
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14 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™2013-yesActive1 (Unlimited)3EAR99-188WNOT SPECIFIEDNOT SPECIFIED---1SingleStandard188WPOWER CONTROLN-CHANNEL650V55A70 ns650V31 ns400V, 15A, 23 Ω, 15V2.1V @ 15V, 30A246 nsTrench70nC90A20ns/190ns280μJ (on), 100μJ (off)ROHS3 CompliantLead FreeHalogen Free-
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26 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)185WNOT SPECIFIEDNOT SPECIFIED---1SingleStandard185WPOWER CONTROLN-CHANNEL650V60A95 ns650V49 ns400V, 15A, 26 Ω, 15V1.8V @ 15V, 30A429 nsTrench155nC90A39ns/367ns990μJ (on), 330μJ (off)ROHS3 CompliantLead FreeHalogen Free-
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