IKW30N65WR5XKSA1

Infineon Technologies IKW30N65WR5XKSA1

Part Number:
IKW30N65WR5XKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2494287-IKW30N65WR5XKSA1
Description:
IGBT 650V 30A UFAST DIO TO247-3
ECAD Model:
Datasheet:
IKW30N65WR5~

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Specifications
Infineon Technologies IKW30N65WR5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW30N65WR5XKSA1.
  • Factory Lead Time
    26 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Series
    TrenchStop™
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    185W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    185W
  • Transistor Application
    POWER CONTROL
  • Halogen Free
    Halogen Free
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    650V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    95 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Turn On Time
    49 ns
  • Test Condition
    400V, 15A, 26 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    429 ns
  • IGBT Type
    Trench
  • Gate Charge
    155nC
  • Current - Collector Pulsed (Icm)
    90A
  • Td (on/off) @ 25°C
    39ns/367ns
  • Switching Energy
    990μJ (on), 330μJ (off)
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IKW30N65WR5XKSA1 Description
IKW30N65WR5XKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode optimized for ZCS applications. Based on TRENCHSTOPTM 5 technology applications, it is able to deliver high ruggedness, temperature stable behavior, very low VCEsat, and low Eoff, as well as easy parallel switching capability due to a positive temperature coefficient in VCEsat. Therefore, IKW30N65WR5XKSA1 IGBT is well suited for a wide range of applications, including Welding, PFC, ZCS-converters, and more.

IKW30N65WR5XKSA1 Features
High ruggedness Temperature stable behavior Very low VCEsat and low Eoff Easy parallel switching capability Dual high-performance operational error amplifier

IKW30N65WR5XKSA1 Applications
Welding PFC ZCS-converters
IKW30N65WR5XKSA1 More Descriptions
Igbt, 650V, 60A, 175Deg C, 185W Rohs Compliant: Yes |Infineon IKW30N65WR5XKSA1
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
Trans IGBT Chip N-CH 650V 60A 185W 3-Pin(3 Tab) TO-247 Tube
IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full ra
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
Product Comparison
The three parts on the right have similar specifications to IKW30N65WR5XKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Element Configuration
    Input Type
    Power - Max
    Transistor Application
    Halogen Free
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Lead Free
    Switching Frequency
    Terminal Position
    JESD-30 Code
    Configuration
    View Compare
  • IKW30N65WR5XKSA1
    IKW30N65WR5XKSA1
    26 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -40°C~175°C TJ
    Tube
    TrenchStop™
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    185W
    NOT SPECIFIED
    NOT SPECIFIED
    1
    Single
    Standard
    185W
    POWER CONTROL
    Halogen Free
    N-CHANNEL
    650V
    60A
    95 ns
    650V
    49 ns
    400V, 15A, 26 Ω, 15V
    1.8V @ 15V, 30A
    429 ns
    Trench
    155nC
    90A
    39ns/367ns
    990μJ (on), 330μJ (off)
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • IKW30N65EL5XKSA1
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -40°C~175°C TJ
    Tube
    TrenchStop™ 5
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    227W
    NOT SPECIFIED
    NOT SPECIFIED
    1
    Single
    Standard
    227W
    POWER CONTROL
    Halogen Free
    N-CHANNEL
    650V
    85A
    100 ns
    650V
    44 ns
    400V, 30A, 10 Ω, 15V
    1.35V @ 15V, 30A
    520 ns
    -
    168nC
    120A
    33ns/308ns
    470μJ (on), 1.35mJ (off)
    ROHS3 Compliant
    Lead Free
    50Hz
    -
    -
    -
  • IKW30N65H5XKSA1
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -40°C~175°C TJ
    Tube
    TrenchStop™
    2013
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    188W
    NOT SPECIFIED
    NOT SPECIFIED
    1
    Single
    Standard
    188W
    POWER CONTROL
    Halogen Free
    N-CHANNEL
    650V
    55A
    70 ns
    650V
    31 ns
    400V, 15A, 23 Ω, 15V
    2.1V @ 15V, 30A
    246 ns
    Trench
    70nC
    90A
    20ns/190ns
    280μJ (on), 100μJ (off)
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • IKW30N60DTPXKSA1
    16 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -40°C~175°C TJ
    Tube
    TrenchStop™
    2016
    e3
    yes
    Active
    Not Applicable
    3
    EAR99
    Tin (Sn)
    200W
    NOT SPECIFIED
    NOT SPECIFIED
    1
    -
    Standard
    200W
    POWER CONTROL
    -
    N-CHANNEL
    1.8V
    53A
    76 ns
    600V
    38 ns
    400V, 30A, 10.5 Ω, 15V
    1.8V @ 15V, 30A
    279 ns
    Trench Field Stop
    130nC
    90A
    15ns/179ns
    710μJ (on), 420μJ (off)
    ROHS3 Compliant
    -
    -
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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