Infineon Technologies IKW30N65WR5XKSA1
- Part Number:
- IKW30N65WR5XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494287-IKW30N65WR5XKSA1
- Description:
- IGBT 650V 30A UFAST DIO TO247-3
- Datasheet:
- IKW30N65WR5~
Infineon Technologies IKW30N65WR5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW30N65WR5XKSA1.
- Factory Lead Time26 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop™
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation185W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max185W
- Transistor ApplicationPOWER CONTROL
- Halogen FreeHalogen Free
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current60A
- Reverse Recovery Time95 ns
- Collector Emitter Breakdown Voltage650V
- Turn On Time49 ns
- Test Condition400V, 15A, 26 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
- Turn Off Time-Nom (toff)429 ns
- IGBT TypeTrench
- Gate Charge155nC
- Current - Collector Pulsed (Icm)90A
- Td (on/off) @ 25°C39ns/367ns
- Switching Energy990μJ (on), 330μJ (off)
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKW30N65WR5XKSA1 Description
IKW30N65WR5XKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode optimized for ZCS applications. Based on TRENCHSTOPTM 5 technology applications, it is able to deliver high ruggedness, temperature stable behavior, very low VCEsat, and low Eoff, as well as easy parallel switching capability due to a positive temperature coefficient in VCEsat. Therefore, IKW30N65WR5XKSA1 IGBT is well suited for a wide range of applications, including Welding, PFC, ZCS-converters, and more.
IKW30N65WR5XKSA1 Features
High ruggedness Temperature stable behavior Very low VCEsat and low Eoff Easy parallel switching capability Dual high-performance operational error amplifier
IKW30N65WR5XKSA1 Applications
Welding PFC ZCS-converters
IKW30N65WR5XKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode optimized for ZCS applications. Based on TRENCHSTOPTM 5 technology applications, it is able to deliver high ruggedness, temperature stable behavior, very low VCEsat, and low Eoff, as well as easy parallel switching capability due to a positive temperature coefficient in VCEsat. Therefore, IKW30N65WR5XKSA1 IGBT is well suited for a wide range of applications, including Welding, PFC, ZCS-converters, and more.
IKW30N65WR5XKSA1 Features
High ruggedness Temperature stable behavior Very low VCEsat and low Eoff Easy parallel switching capability Dual high-performance operational error amplifier
IKW30N65WR5XKSA1 Applications
Welding PFC ZCS-converters
IKW30N65WR5XKSA1 More Descriptions
Igbt, 650V, 60A, 175Deg C, 185W Rohs Compliant: Yes |Infineon IKW30N65WR5XKSA1
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
Trans IGBT Chip N-CH 650V 60A 185W 3-Pin(3 Tab) TO-247 Tube
IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full ra
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
650 V, 30 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHSInfineon SCT
Trans IGBT Chip N-CH 650V 60A 185W 3-Pin(3 Tab) TO-247 Tube
IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full ra
The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar
The three parts on the right have similar specifications to IKW30N65WR5XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationHalogen FreePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLead FreeSwitching FrequencyTerminal PositionJESD-30 CodeConfigurationView Compare
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IKW30N65WR5XKSA126 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™2005e3yesActive1 (Unlimited)3EAR99Tin (Sn)185WNOT SPECIFIEDNOT SPECIFIED1SingleStandard185WPOWER CONTROLHalogen FreeN-CHANNEL650V60A95 ns650V49 ns400V, 15A, 26 Ω, 15V1.8V @ 15V, 30A429 nsTrench155nC90A39ns/367ns990μJ (on), 330μJ (off)ROHS3 CompliantLead Free-----
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14 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™ 52013e3yesActive1 (Unlimited)3EAR99Tin (Sn)227WNOT SPECIFIEDNOT SPECIFIED1SingleStandard227WPOWER CONTROLHalogen FreeN-CHANNEL650V85A100 ns650V44 ns400V, 30A, 10 Ω, 15V1.35V @ 15V, 30A520 ns-168nC120A33ns/308ns470μJ (on), 1.35mJ (off)ROHS3 CompliantLead Free50Hz---
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14 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™2013-yesActive1 (Unlimited)3EAR99-188WNOT SPECIFIEDNOT SPECIFIED1SingleStandard188WPOWER CONTROLHalogen FreeN-CHANNEL650V55A70 ns650V31 ns400V, 15A, 23 Ω, 15V2.1V @ 15V, 30A246 nsTrench70nC90A20ns/190ns280μJ (on), 100μJ (off)ROHS3 CompliantLead Free----
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16 WeeksThrough HoleThrough HoleTO-247-3-SILICON-40°C~175°C TJTubeTrenchStop™2016e3yesActiveNot Applicable3EAR99Tin (Sn)200WNOT SPECIFIEDNOT SPECIFIED1-Standard200WPOWER CONTROL-N-CHANNEL1.8V53A76 ns600V38 ns400V, 30A, 10.5 Ω, 15V1.8V @ 15V, 30A279 nsTrench Field Stop130nC90A15ns/179ns710μJ (on), 420μJ (off)ROHS3 Compliant--SINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODE
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