Infineon Technologies IKW30N65H5XKSA1
- Part Number:
- IKW30N65H5XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494301-IKW30N65H5XKSA1
- Description:
- IGBT 650V 30A FAST DIODE TO247-3
- Datasheet:
- IKW30N65H5XKSA1
Infineon Technologies IKW30N65H5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW30N65H5XKSA1.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop™
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation188W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max188W
- Transistor ApplicationPOWER CONTROL
- Halogen FreeHalogen Free
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current55A
- Reverse Recovery Time70 ns
- Collector Emitter Breakdown Voltage650V
- Turn On Time31 ns
- Test Condition400V, 15A, 23 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
- Turn Off Time-Nom (toff)246 ns
- IGBT TypeTrench
- Gate Charge70nC
- Current - Collector Pulsed (Icm)90A
- Td (on/off) @ 25°C20ns/190ns
- Switching Energy280μJ (on), 100μJ (off)
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKW30N65H5XKSA1 Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.
IKW30N65H5XKSA1 Features
High speed H5 technology offering ·Best-in-Class efficiencyin hard switching and resonant topologies ·Plug and play replacement of previousgenerationIGBTs 650V breakdown voltage·Low gate charge QG ·IGBT copacked with RAPID 1 fast and soft antiparallel diode·Maximum junction temperature175°℃ ·Qualified according to JEDEC for target applications·Pb-free lead plating: RoHS compliant ·Complete product spectrum and PSpice Models IKW30N65H5XKSA1 Applications
·Solar converters ·Uninterruptible power supplies·Welding converters ·Mid to high range switching frequency converters
IKW30N65H5XKSA1 Features
High speed H5 technology offering ·Best-in-Class efficiencyin hard switching and resonant topologies ·Plug and play replacement of previousgenerationIGBTs 650V breakdown voltage·Low gate charge QG ·IGBT copacked with RAPID 1 fast and soft antiparallel diode·Maximum junction temperature175°℃ ·Qualified according to JEDEC for target applications·Pb-free lead plating: RoHS compliant ·Complete product spectrum and PSpice Models IKW30N65H5XKSA1 Applications
·Solar converters ·Uninterruptible power supplies·Welding converters ·Mid to high range switching frequency converters
IKW30N65H5XKSA1 More Descriptions
Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, TO-247
Igbt, Single, 650V, 55A, To-247; Dc Collector Current:55A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW30N65H5XKSA1
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHSInfineon SCT
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.65 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 188 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Igbt, Single, 650V, 55A, To-247; Dc Collector Current:55A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW30N65H5XKSA1
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHSInfineon SCT
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.65 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 188 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
The three parts on the right have similar specifications to IKW30N65H5XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationHalogen FreePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLead FreeBase Part NumberReference StandardCase ConnectionJESD-609 CodeTerminal FinishTerminal PositionJESD-30 CodeConfigurationView Compare
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IKW30N65H5XKSA114 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™2013yesActive1 (Unlimited)3EAR99188WNOT SPECIFIEDNOT SPECIFIED1SingleStandard188WPOWER CONTROLHalogen FreeN-CHANNEL650V55A70 ns650V31 ns400V, 15A, 23 Ω, 15V2.1V @ 15V, 30A246 nsTrench70nC90A20ns/190ns280μJ (on), 100μJ (off)ROHS3 CompliantLead Free---------
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14 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop®2014yesLast Time Buy1 (Unlimited)3EAR99187WNOT SPECIFIEDNOT SPECIFIED1SingleStandard187WPOWER CONTROL-N-CHANNEL600V60A143 ns600V50 ns400V, 30A, 10.6 Ω, 15V2.05V @ 15V, 30A382 nsTrench Field Stop167nC90A23ns/254ns1.46mJROHS3 CompliantLead Free*KW30N60AEC-Q101COLLECTOR-----
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16 WeeksThrough HoleThrough HoleTO-247-3-SILICON-40°C~175°C TJTubeTrenchStop™2016yesActiveNot Applicable3EAR99200WNOT SPECIFIEDNOT SPECIFIED1-Standard200WPOWER CONTROL-N-CHANNEL1.8V53A76 ns600V38 ns400V, 30A, 10.5 Ω, 15V1.8V @ 15V, 30A279 nsTrench Field Stop130nC90A15ns/179ns710μJ (on), 420μJ (off)ROHS3 Compliant----e3Tin (Sn)SINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODE
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26 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™2005yesActive1 (Unlimited)3EAR99185WNOT SPECIFIEDNOT SPECIFIED1SingleStandard185WPOWER CONTROLHalogen FreeN-CHANNEL650V60A95 ns650V49 ns400V, 15A, 26 Ω, 15V1.8V @ 15V, 30A429 nsTrench155nC90A39ns/367ns990μJ (on), 330μJ (off)ROHS3 CompliantLead Free---e3Tin (Sn)---
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