Infineon Technologies IGW30N100TFKSA1
- Part Number:
- IGW30N100TFKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494545-IGW30N100TFKSA1
- Description:
- IGBT 1000V 60A 412W TO247-3
- Datasheet:
- IGW30N100T
Infineon Technologies IGW30N100TFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IGW30N100TFKSA1.
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackagePG-TO247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchStop®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Input TypeStandard
- Power - Max412W
- Voltage - Collector Emitter Breakdown (Max)1V
- Current - Collector (Ic) (Max)60A
- Test Condition600V, 30A, 16Ohm, 15V
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
- IGBT TypeTrench Field Stop
- Gate Charge217nC
- Current - Collector Pulsed (Icm)90A
- Td (on/off) @ 25°C33ns/535ns
- Switching Energy3.8mJ
- RoHS StatusROHS3 Compliant
IGW30N100TFKSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IGW30N100TFKSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IGW30N100TFKSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IGW30N100TFKSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IGW30N100TFKSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IGW30N100TFKSA1 More Descriptions
Trans IGBT Chip N-CH 1000V 60A 412000mW Automotive 3-Pin(3 Tab) TO-247 Tube
Transistor, Igbt, 1Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:412W; Collector Emitter Voltage V(Br)Ceo:1Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Transistor, Igbt, 1Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:412W; Collector Emitter Voltage V(Br)Ceo:1Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
The three parts on the right have similar specifications to IGW30N100TFKSA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Input TypePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Test ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusFactory Lead TimeMountNumber of PinsTransistor Element MaterialPublishedPbfree CodeNumber of TerminationsECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationTransistor ApplicationHalogen FreePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn On TimeSwitching FrequencyTurn Off Time-Nom (toff)Lead FreeSurface MountJESD-609 CodeTerminal FinishTerminal PositionBase Part NumberPin CountJESD-30 CodeQualification StatusConfigurationView Compare
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IGW30N100TFKSA1Through HoleTO-247-3PG-TO247-3-55°C~175°C TJTubeTrenchStop®Obsolete3 (168 Hours)Standard412W1V60A600V, 30A, 16Ohm, 15V1.9V @ 15V, 30ATrench Field Stop217nC90A33ns/535ns3.8mJROHS3 Compliant---------------------------------
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Through HoleTO-247-3--40°C~175°C TJTubeTrenchStop™ 5Active1 (Unlimited)Standard227W--400V, 30A, 10 Ω, 15V1.35V @ 15V, 30A-168nC120A33ns/308ns470μJ (on), 1.35mJ (off)ROHS3 Compliant16 WeeksThrough Hole3SILICON2013yes3EAR99227WNOT SPECIFIEDNOT SPECIFIED1SinglePOWER CONTROLHalogen FreeN-CHANNEL650V85A650V44 ns50Hz520 nsLead Free---------
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Through HoleTO-247-3--40°C~175°C TJTubeTrenchStop®Active1 (Unlimited)Standard187W600V60A400V, 30A, 10.5 Ω, 15V2.4V @ 15V, 30ATrench Field Stop165nC120A21ns/207ns1.38mJROHS3 Compliant17 Weeks--SILICON2014yes3EAR99-NOT SPECIFIEDNOT SPECIFIED1-POWER CONTROL-N-CHANNEL---50 ns-262 ns-NOe3Tin (Sn)SINGLE*GW30N603R-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE
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Through HoleTO-247-3--40°C~175°C TJTubeTrenchStop™ActiveNot ApplicableStandard200W--400V, 30A, 10.5 Ω, 15V1.8V @ 15V, 30ATrench Field Stop130nC90A15ns/179ns710μJ (on), 420μJ (off)ROHS3 Compliant16 WeeksThrough Hole-SILICON2006yes3EAR99200WNOT SPECIFIEDNOT SPECIFIED1-POWER CONTROL-N-CHANNEL1.8V53A600V38 ns-279 ns--e3Tin (Sn)SINGLE--R-PSFM-T3-SINGLE
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