Infineon Technologies IGW30N65L5XKSA1
- Part Number:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854523-IGW30N65L5XKSA1
- Description:
- IGBT 650V 30A TRENCHSTOP TO247-3
- Datasheet:
- IGW30N65L5XKSA1
Infineon Technologies IGW30N65L5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IGW30N65L5XKSA1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop™ 5
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation227W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max227W
- Transistor ApplicationPOWER CONTROL
- Halogen FreeHalogen Free
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current85A
- Collector Emitter Breakdown Voltage650V
- Turn On Time44 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.35V @ 15V, 30A
- Switching Frequency50Hz
- Turn Off Time-Nom (toff)520 ns
- Gate Charge168nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C33ns/308ns
- Switching Energy470μJ (on), 1.35mJ (off)
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IGW30N65L5XKSA1 Description
IGW30N65L5XKSA1 is a 650v Low VCE(sat) IGBT in TRENCHSTOPTM5 technology. The Infineon IGW30N65L5XKSA1 can be applied in Uninterruptible power supplies, Solar photovoltaic inverters, and Welding machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW30N65L5XKSA1 is in the PG-TO247-3 package with 227W power dissipation.
IGW30N65L5XKSA1 Features
Very low collector-emitter saturation voltage VCEsat The best-in-Class tradeoff between conduction and switching losses 650V breakdown voltage Low gate charge QG Maximum junction temperature 175°C Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant
IGW30N65L5XKSA1 Applications
Uninterruptible power supplies Solar photovoltaic inverters Welding machines Automotive Infotainment & cluster Communications equipment
IGW30N65L5XKSA1 is a 650v Low VCE(sat) IGBT in TRENCHSTOPTM5 technology. The Infineon IGW30N65L5XKSA1 can be applied in Uninterruptible power supplies, Solar photovoltaic inverters, and Welding machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW30N65L5XKSA1 is in the PG-TO247-3 package with 227W power dissipation.
IGW30N65L5XKSA1 Features
Very low collector-emitter saturation voltage VCEsat The best-in-Class tradeoff between conduction and switching losses 650V breakdown voltage Low gate charge QG Maximum junction temperature 175°C Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant
IGW30N65L5XKSA1 Applications
Uninterruptible power supplies Solar photovoltaic inverters Welding machines Automotive Infotainment & cluster Communications equipment
IGW30N65L5XKSA1 More Descriptions
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3 Tab) TO-247 Tube
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW30N65L5XKSA1
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHSInfineon SCT
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW30N65L5XKSA1
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHSInfineon SCT
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
The three parts on the right have similar specifications to IGW30N65L5XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationInput TypePower - MaxTransistor ApplicationHalogen FreePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcSwitching FrequencyTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishTerminal PositionBase Part NumberPin CountJESD-30 CodeQualification StatusConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)IGBT TypeSupplier Device PackageView Compare
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IGW30N65L5XKSA116 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~175°C TJTubeTrenchStop™ 52013yesActive1 (Unlimited)3EAR99227WNOT SPECIFIEDNOT SPECIFIED1SingleStandard227WPOWER CONTROLHalogen FreeN-CHANNEL650V85A650V44 ns400V, 30A, 10 Ω, 15V1.35V @ 15V, 30A50Hz520 ns168nC120A33ns/308ns470μJ (on), 1.35mJ (off)ROHS3 CompliantLead Free--------------
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17 Weeks-Through HoleTO-247-3-SILICON-40°C~175°C TJTubeTrenchStop®2014yesActive1 (Unlimited)3EAR99-NOT SPECIFIEDNOT SPECIFIED1-Standard187WPOWER CONTROL-N-CHANNEL---50 ns400V, 30A, 10.5 Ω, 15V2.4V @ 15V, 30A-262 ns165nC120A21ns/207ns1.38mJROHS3 Compliant-NOe3Tin (Sn)SINGLE*GW30N603R-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE600V60ATrench Field Stop-
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--Through HoleTO-247-3---55°C~175°C TJTubeTrenchStop®--Obsolete3 (168 Hours)-------Standard412W-------600V, 30A, 16Ohm, 15V1.9V @ 15V, 30A--217nC90A33ns/535ns3.8mJROHS3 Compliant----------1V60ATrench Field StopPG-TO247-3
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16 WeeksThrough HoleThrough HoleTO-247-3-SILICON-40°C~175°C TJTubeTrenchStop™2006yesActiveNot Applicable3EAR99200WNOT SPECIFIEDNOT SPECIFIED1-Standard200WPOWER CONTROL-N-CHANNEL1.8V53A600V38 ns400V, 30A, 10.5 Ω, 15V1.8V @ 15V, 30A-279 ns130nC90A15ns/179ns710μJ (on), 420μJ (off)ROHS3 Compliant--e3Tin (Sn)SINGLE--R-PSFM-T3-SINGLE--Trench Field Stop-
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