Fairchild/ON Semiconductor FQP55N06

Name: FQP55N06
Brand: Fairchild/ON Semiconductor
SKU: 2489723-FQP55N06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP55N06

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2489723-FQP55N06

Description:: MOSFET N-CH 60V 55A TO-220

ECAD Model:

Datasheet:: FQP55N06 TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP55N06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP55N06.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
133W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.69pF @ 25V
Current - Continuous Drain (Id) @ 25°C
55A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
55A
Drain-source On Resistance-Max
0.02Ohm
Pulsed Drain Current-Max (IDM)
220A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
545 mJ
RoHS Status
ROHS3 Compliant

Description

FQP55N06 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 545 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.69pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [55A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 220A.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQP55N06 Features
the avalanche energy rating (Eas) is 545 mJ
based on its rated peak drain current 220A.
a 60V drain to source voltage (Vdss)

FQP55N06 Applications
There are a lot of Rochester Electronics, LLC
FQP55N06 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

FQP55N06 More Descriptions

MOSFET N-CH 60V 55A TO-220
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
IC SUPERVISOR 1 CHANNEL 5VSOF
MISCELLANEOUS MOSFETS;
Contact for details

Product Comparison

The three parts on the right have similar specifications to FQP55N06.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Published

View Compare
FQP55N06

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

QFET®

e3

yes

Obsolete

1 (Unlimited)

3

TIN

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

133W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

20m Ω @ 27.5A, 10V

4V @ 250μA

1.69pF @ 25V

55A Tc

46nC @ 10V

60V

10V

±25V

TO-220AB

55A

0.02Ohm

220A

60V

545 mJ

ROHS3 Compliant

-

-

-
FQP58N08

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

QFET®

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

146W Tc

-

N-Channel

-

24mOhm @ 28.75A, 10V

4V @ 250μA

1900pF @ 25V

57.5A Tc

65nC @ 10V

80V

10V

±25V

-

-

-

-

-

-

-

TO-220-3

2000

FQP55N06 vs FQP58N08
FQP5N40

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~150°C TJ

Tube

QFET®

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

70W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.6 Ω @ 2.25A, 10V

5V @ 250μA

460pF @ 25V

4.5A Tc

13nC @ 10V

400V

10V

±30V

TO-220AB

4.5A

-

18A

400V

290 mJ

ROHS3 Compliant

-

-

FQP55N06 vs FQP5N40
FQP5P20

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

QFET®

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

75W Tc

-

P-Channel

-

1.4Ohm @ 2.4A, 10V

5V @ 250μA

430pF @ 25V

4.8A Tc

13nC @ 10V

200V

10V

±30V

-

-

-

-

-

-

ROHS3 Compliant

TO-220-3

-

FQP55N06 vs FQP5P20