Fairchild/ON Semiconductor FQP50N06L

Name: FQP50N06L
Brand: Fairchild/ON Semiconductor
SKU: 2849035-FQP50N06L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQP50N06L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849035-FQP50N06L

Description:: MOSFET N-CH 60V 52.4A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FQP50N06L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQP50N06L.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
21MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
52.4A
Number of Elements
1
Power Dissipation-Max
121W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
121W
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
21m Ω @ 26.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C
52.4A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 5V
Rise Time
380ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
145 ns
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
52A
Threshold Voltage
2.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
990 mJ
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQP50N06L Description
FQP50N06L is a type of N-Channel QFET? enhancement-mode power MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, DC motor control, audio amplifier, and variable switching power applications.

FQP50N06L Features
Low gate charge
Low on-state resistance
Superior switching performance
High avalanche energy strength
Available in the TO-220 package

FQP50N06L Applications
DC motor control
Audio amplifier
Switched-mode power supplies
Variable switching power applications

FQP50N06L More Descriptions

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220
Trans MOSFET N-CH 60V 52.4A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:52.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:121W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:52A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-220; Power Dissipation Pd:121W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Product Comparison

The three parts on the right have similar specifications to FQP50N06L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Drain-source On Resistance-Max

Case Connection

View Compare
FQP50N06L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

9 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

21MOhm

Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

52.4A

1

121W Tc

Single

ENHANCEMENT MODE

121W

20 ns

N-Channel

SWITCHING

21m Ω @ 26.2A, 10V

2.5V @ 250μA

1630pF @ 25V

52.4A Tc

32nC @ 5V

380ns

5V 10V

±20V

145 ns

80 ns

52A

2.5V

TO-220AB

20V

60V

990 mJ

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQP5N80

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

140W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

2.6 Ω @ 2.4A, 10V

5V @ 250μA

1.25pF @ 25V

4.8A Tc

33nC @ 10V

-

10V

±30V

-

-

-

-

TO-220AB

-

-

590 mJ

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

800V

4.8A

19.2A

800V

-

-

FQP50N06L vs FQP5N80
FQP55N06

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

TIN

-

-

MOSFET (Metal Oxide)

-

1

133W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

20m Ω @ 27.5A, 10V

4V @ 250μA

1.69pF @ 25V

55A Tc

46nC @ 10V

-

10V

±25V

-

-

-

-

TO-220AB

-

-

545 mJ

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

55A

220A

60V

0.02Ohm

-

FQP50N06L vs FQP55N06
FQP5N20L

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

52W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.2 Ω @ 2.25A, 10V

2V @ 250μA

325pF @ 25V

4.5A Tc

6.2nC @ 5V

-

5V 10V

±20V

-

-

-

-

TO-220AB

-

-

60 mJ

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

200V

4.5A

18A

200V

1.25Ohm

DRAIN

FQP50N06L vs FQP5N20L

Certification

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FQP50N06L Specification

Part Number	Manufacturers	Description	Stock	Price
FQP50N06L DISTI #V36:1790_06359747	ON Semiconductor	QF 60V 21MOHM L TO220	752	1 $1.6137 10 $1.2515 100 $1.0055 500 $0.8821 1000 $0.7316 2000 $0.7217
FQP50N06L DISTI #FQP50N06L-ND	ON Semiconductor	MOSFET N-CH 60V 52.4A TO-220 RoHS: Compliant	1215	1 $1.57 10 $1.408 25 $1.3284 100 $1.1319 1000 $0.77054 3000 $0.7174 5000 $0.69083
FQP50N06L DISTI #32911875	ON Semiconductor	QF 60V 21MOHM L TO220	1872	50 $0.5695 100 $0.5658 150 $0.5597
FQP50N06L DISTI #31969457	ON Semiconductor	QF 60V 21MOHM L TO220	752	10 $1.2515 100 $1.0055 500 $0.8821 1000 $0.7316 2000 $0.7217
FQP50N06L DISTI #FQP50N06L	ON Semiconductor	Trans MOSFET N-CH 60V 52.4A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	4	50 $0.57529 100 $0.57156 150 $0.56423 250 $0.55709 500 $0.54333
FQP50N06L DISTI #FQP50N06L	ON Semiconductor	Trans MOSFET N-CH 60V 52.4A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	650	1 $0.9559 10 $0.8499 25 $0.7649 50 $0.6949 100 $0.6369 500 $0.5879 1000 $0.5459
FQP50N06L DISTI #FQP50N06L	ON Semiconductor	Trans MOSFET N-CH 60V 52.4A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1000 $0.8802 2000 $0.84635 3000 $0.815 5000 $0.78589 10000 $0.75879 25000 $0.7335 50000 $0.72148
FQP50N06L DISTI #FQP50N06L	ON Semiconductor	Trans MOSFET N-CH 60V 52.4A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	439 $0.7449 878 $0.7399 1317 $0.7299 2195 $0.7209 4390 $0.7029
FQP50N06L DISTI #38C7278	ON Semiconductor	Trans MOSFET N-CH 60V 52.4A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1 $1.84 10 $1.57 100 $1.27 500 $1.12 1000 $0.937 2500 $0.877 5000 $0.846
FQP50N06L DISTI #38C7278	ON Semiconductor	MOSFET, N, Transistor Polarity:N Channel, Contin	81	1 $1.78 10 $1.52 100 $1.23 500 $1.09 1000 $0.908 2500 $0.85 5000 $0.82
FQP50N06L. DISTI #81AC8736	ON Semiconductor	QF 60V 21MOHM L TO220 ROHS COMPLIANT: YES	4	1 $1.82 10 $1.56 100 $1.26 500 $1.09 1000 $0.908 2500 $0.85 5000 $0.82
FQP50N06L DISTI #	ON Semiconductor	N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO- RoHS: Compliant	950	25 $1.19 100 $0.83 250 $0.775 500 $0.735 1000 $0.695
FQP50N06L DISTI #512-FQP50N06L	ON Semiconductor	MOSFET 60V N-Channel QFET Logic Level RoHS: Compliant	1153	1 $1.48 10 $1.26 100 $1.01 500 $0.885 1000 $0.733 2000 $0.723
FQP50N06L_Q DISTI #512-FQP50N06L_Q	ON Semiconductor	MOSFET 60V N-Channel QFET Logic Level RoHS: Not Compliant	0
FQP50N06L DISTI #	ON Semiconductor	RoHS: Not Compliant	12645	1 $0.79 25 $0.74 100 $0.71 500 $0.68 1000 $0.65
FQP50N06L DISTI #	Fairchild Semiconductor Corporation	RoHS: Not Compliant	355	1 $0.79 25 $0.74 100 $0.71 500 $0.68 1000 $0.65
FQP50N06L DISTI #6715146	ON Semiconductor	MOSFET N-CHANNEL 60V 52.4A TO220AB, PK	195	5 $1.538 25 $1.242
FQP50N06L DISTI #6715146P	ON Semiconductor	MOSFET N-CHANNEL 60V 52.4A TO220AB, TU	1235	25 $1.242
FQP50N06L DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 52.4A I(D), 60V, 0. RoHS: Compliant	350
FQP50N06L DISTI #XSFP00000002011	Fairchild Semiconductor Corporation	RoHS: Compliant	750	150 $1.19 750 $1.11
FQP50N06L DISTI #1611615	ON Semiconductor	MOSFET, N RoHS: Compliant	908	1 $2.28 10 $1.94 100 $1.56 500 $1.36 1000 $1.13 2000 $1.12
FQP50N06L DISTI #1611615	ON Semiconductor	MOSFET, N	983	1 $1.32 10 $1.03 100 $0.786 250 $0.738 500 $0.689

FQP50N0~~(8)~~
FQP50N~~(8)~~
FQP50~~(8)~~
FQP5~~(40)~~
FQP~~(96)~~

Fairchild/ON Semiconductor FQP50N06L

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