Fairchild/ON Semiconductor FQA28N15

Name: FQA28N15
Brand: Fairchild/ON Semiconductor
SKU: 2482941-FQA28N15
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQA28N15

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482941-FQA28N15

Description:: MOSFET N-CH 150V 33A TO-3P

ECAD Model:

Datasheet:: FQA28N15

Specifications

Fairchild/ON Semiconductor FQA28N15 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA28N15.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
90MOhm
Terminal Finish
Tin (Sn)
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Current Rating
33A
Number of Elements
1
Power Dissipation-Max
227W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
227W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Rise Time
180ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
115 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
33A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
150V
Height
20.1mm
Length
15.8mm
Width
5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQA28N15 Description
Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring variable switching power, DC motor control, audio amplifier, and switched mode power supplies.

FQA28N15 Features
33 A, 150 V, RDS(on) = 90 m? (Max.) @ VGS = 10 V, ID = 16.5 A
Low Gate Charge (Typ. 40 nC)
Low Crss (Typ. 50 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating

FQA28N15 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FQA28N15 More Descriptions

N-Channel Power MOSFET, QFET®, 150V, 33A, 90mΩ, TO-3P
MOSFET, N CH, 150V, 33A, TO-3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Product Comparison

The three parts on the right have similar specifications to FQA28N15.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Avalanche Energy Rating (Eas)

View Compare
FQA28N15

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

4 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~175°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

90MOhm

Tin (Sn)

FAST SWITCHING

FET General Purpose Power

150V

MOSFET (Metal Oxide)

33A

1

227W Tc

Single

ENHANCEMENT MODE

227W

17 ns

N-Channel

SWITCHING

90m Ω @ 16.5A, 10V

4V @ 250μA

1600pF @ 25V

33A Tc

52nC @ 10V

180ns

10V

±25V

115 ns

100 ns

33A

4V

25V

150V

20.1mm

15.8mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
FQA28N15_F109

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

-

-55°C~175°C TJ

Tube

QFET®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

227W Tc

-

-

-

-

N-Channel

-

90mOhm @ 16.5A, 10V

4V @ 250μA

1600pF @ 25V

33A Tc

52nC @ 10V

-

10V

±25V

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-3PN

150V

-

FQA28N15 vs FQA28N15_F109
FQA22P10

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

-

-55°C~175°C TJ

Tube

QFET®

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

150W Tc

-

-

-

-

P-Channel

-

125mOhm @ 12A, 10V

4V @ 250μA

1500pF @ 25V

24A Tc

50nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-3PN

100V

-

FQA28N15 vs FQA22P10
FQA27N25

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

4 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Tin (Sn)

-

FET General Purpose Power

250V

MOSFET (Metal Oxide)

27A

1

210W Tc

Single

ENHANCEMENT MODE

210W

32 ns

N-Channel

SWITCHING

110m Ω @ 13.5A, 10V

5V @ 250μA

2450pF @ 25V

27A Tc

65nC @ 10V

270ns

10V

±30V

120 ns

80 ns

27A

-

30V

250V

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

600 mJ

FQA28N15 vs FQA27N25