FGH20N60UFDTU

Fairchild/ON Semiconductor FGH20N60UFDTU

Part Number:
FGH20N60UFDTU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2494325-FGH20N60UFDTU
Description:
IGBT 600V 40A 165W TO247
ECAD Model:
Datasheet:
FGH20N60UFDTU

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Specifications
Fairchild/ON Semiconductor FGH20N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH20N60UFDTU.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    165W
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    13 ns
  • Power - Max
    165W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    87 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    40A
  • Reverse Recovery Time
    34 ns
  • JEDEC-95 Code
    TO-247AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    600V
  • Turn On Time
    29 ns
  • Test Condition
    400V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    155 ns
  • IGBT Type
    Field Stop
  • Gate Charge
    63nC
  • Current - Collector Pulsed (Icm)
    60A
  • Td (on/off) @ 25°C
    13ns/87ns
  • Switching Energy
    380μJ (on), 260μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    64ns
  • Height
    20.6mm
  • Length
    15.6mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGH20N60UFDTU                                    Description Using novel field stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS,welder and PFC applications where low conduction and switching losses are essential.
FGH20N60UFDTU                                   Features
? High Current Capability ? Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A ? High Input Impedance ? Fast Switching ? This Device is Pb?Free and is RoHS Compliant
FGH20N60UFDTU                                   Applications
? Solar Inverter, UPS, Welder, PFC  
FGH20N60UFDTU More Descriptions
Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3 Tab) TO-247AB Tube
FGH20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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