FGA30S120P

Fairchild/ON Semiconductor FGA30S120P

Part Number:
FGA30S120P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3587269-FGA30S120P
Description:
IGBT 1300V 60A 348W TO3P
ECAD Model:
Datasheet:
FGA30S120P

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Specifications
Fairchild/ON Semiconductor FGA30S120P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA30S120P.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    15 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.401g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    348W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Rise Time-Max
    490ns
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    348W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.3kV
  • Max Collector Current
    60A
  • Collector Emitter Breakdown Voltage
    1.3kV
  • Voltage - Collector Emitter Breakdown (Max)
    1300V
  • Collector Emitter Saturation Voltage
    2.3V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    78nC
  • Current - Collector Pulsed (Icm)
    150A
  • Gate-Emitter Voltage-Max
    25V
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Height
    20.1mm
  • Length
    15.8mm
  • Width
    5mm
  • RoHS Status
    ROHS3 Compliant
Description
FGA30S120P Description
The FGA30S120P is a Shorted-anode IGBT that employs sophisticated field stop trench and shorted-anode technology. Fairchild's shorted-anode Trench IGBTs provide enhanced conduction and switching performance for soft switching applications. The FGA30S120P has excellent avalanche capability and can operate in parallel mode. The FGA30S120P is intended for use with induction heating and a microwave oven.

FGA30S120P Features
High-Speed Switching
Low Saturation Voltage: VeE(eat)= 1.75V @lc=30A
High Input Impedance
RoHS Compliant

 FGA30S120P Applications
Induction Heating, Microwave Oven

FGA30S120P More Descriptions
IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3 Tab) TO-3P Tube
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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