Fairchild/ON Semiconductor FGA30S120P
- Part Number:
- FGA30S120P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3587269-FGA30S120P
- Description:
- IGBT 1300V 60A 348W TO3P
- Datasheet:
- FGA30S120P
Fairchild/ON Semiconductor FGA30S120P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA30S120P.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation348W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Rise Time-Max490ns
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max348W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.3kV
- Max Collector Current60A
- Collector Emitter Breakdown Voltage1.3kV
- Voltage - Collector Emitter Breakdown (Max)1300V
- Collector Emitter Saturation Voltage2.3V
- Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
- IGBT TypeTrench Field Stop
- Gate Charge78nC
- Current - Collector Pulsed (Icm)150A
- Gate-Emitter Voltage-Max25V
- Gate-Emitter Thr Voltage-Max7.5V
- Height20.1mm
- Length15.8mm
- Width5mm
- RoHS StatusROHS3 Compliant
FGA30S120P Description
The FGA30S120P is a Shorted-anode IGBT that employs sophisticated field stop trench and shorted-anode technology. Fairchild's shorted-anode Trench IGBTs provide enhanced conduction and switching performance for soft switching applications. The FGA30S120P has excellent avalanche capability and can operate in parallel mode. The FGA30S120P is intended for use with induction heating and a microwave oven.
FGA30S120P Features
High-Speed Switching
Low Saturation Voltage: VeE(eat)= 1.75V @lc=30A
High Input Impedance
RoHS Compliant
FGA30S120P Applications
Induction Heating, Microwave Oven
The FGA30S120P is a Shorted-anode IGBT that employs sophisticated field stop trench and shorted-anode technology. Fairchild's shorted-anode Trench IGBTs provide enhanced conduction and switching performance for soft switching applications. The FGA30S120P has excellent avalanche capability and can operate in parallel mode. The FGA30S120P is intended for use with induction heating and a microwave oven.
FGA30S120P Features
High-Speed Switching
Low Saturation Voltage: VeE(eat)= 1.75V @lc=30A
High Input Impedance
RoHS Compliant
FGA30S120P Applications
Induction Heating, Microwave Oven
FGA30S120P More Descriptions
IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3 Tab) TO-3P Tube
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
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