Fairchild/ON Semiconductor FGA30N60LSDTU

Name: FGA30N60LSDTU
Brand: Fairchild/ON Semiconductor
SKU: 2496350-FGA30N60LSDTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FGA30N60LSDTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2496350-FGA30N60LSDTU

Description:: IGBT 600V 60A 480W TO3PN

ECAD Model:

Datasheet:: FGA30N60LSDTU

Specifications

Fairchild/ON Semiconductor FGA30N60LSDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA30N60LSDTU.

Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
480W
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
480W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Reverse Recovery Time
35 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
62 ns
Test Condition
400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.4V @ 15V, 30A
Turn Off Time-Nom (toff)
2870 ns
IGBT Type
Trench Field Stop
Gate Charge
225nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
18ns/250ns
Switching Energy
1.1mJ (on), 21mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Fall Time-Max (tf)
2000ns
Height
18.9mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FGA30N60LSDTU Description
FGA30N60LSDTU is a type of Field Stop Trench IGBT provided by ON Semiconductor. It is able to deliver fast switching speed, tight parameter distribution, and high input impedance. Easy parallel operating can be ensured based on a positive temperature coefficient. As a result, the FGA30N60LSDTU IGBT is well suited for a wide range of applications, including single boost, and multi-channel interleaved.

FGA30N60LSDTU Features
Easy parallel operating Tight parameter distribution Fast switching speed High input impedance Positive temperature coefficient

FGA30N60LSDTU Applications
Single boost Multi-channel interleaved

FGA30N60LSDTU More Descriptions

Trans IGBT Chip N-CH 600V 60A 3-Pin(3 Tab) TO-3P(N) Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 30A 600V N-Ch Planar
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.

Certification