Fairchild/ON Semiconductor FDV303N

Name: FDV303N
Brand: Fairchild/ON Semiconductor
SKU: 2477943-FDV303N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDV303N

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477943-FDV303N

Description:: MOSFET N-CH 25V 680MA SOT-23

ECAD Model:

Datasheet:: FDV303N

Specifications

Fairchild/ON Semiconductor FDV303N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDV303N.

Package / Case
SOT-23
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
80mΩ @ 2A,4.5V
Vgs(th) (Max) @ Id
1.3V @ 250uA
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (Id) @ 25°C
2A
RoHS Status
RoHS Compliant

Description

FDV303N Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FDV303N or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDV303N. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

FDV303N More Descriptions

Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Transistor, digital FET, N-channel, MOSFET, 25V, 0.68A, 0.35W, SOT-23 | ON Semiconductor FDV303N
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R
N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3
MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Product Comparison

The three parts on the right have similar specifications to FDV303N.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Supplier Device Package

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDV303N

Fairchild/ON Semiconductor

SOT-23

Tape & Reel (TR)

N Channel

80mΩ @ 2A,4.5V

1.3V @ 250uA

20V

2A

RoHS Compliant

-

-

-

-

-

-

-

-

-

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FDV302P

Fairchild/ON Semiconductor

TO-236-3, SC-59, SOT-23-3

Tape & Reel (TR)

P-Channel

10 Ω @ 200mA, 4.5V

1.5V @ 250μA

25V

-

ROHS3 Compliant

ACTIVE (Last Updated: 16 hours ago)

10 Weeks

Tin

Surface Mount

Surface Mount

3

30mg

SILICON

-55°C~150°C TJ

1997

e3

yes

Active

1 (Unlimited)

3

EAR99

13Ohm

LOGIC LEVEL COMPATIBLE

Other Transistors

-25V

MOSFET (Metal Oxide)

DUAL

GULL WING

-120mA

1

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

5 ns

SWITCHING

11pF @ 10V

120mA Ta

0.31nC @ 4.5V

8ns

2.7V 4.5V

±8V

8 ns

9 ns

120mA

-1V

-8V

-25V

-25V

150°C

-1 V

1.11mm

2.92mm

1.3mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDV303N vs FDV302P
FDV304P_NB8U003

Fairchild/ON Semiconductor

TO-236-3, SC-59, SOT-23-3

Tape & Reel (TR)

P-Channel

1.1Ohm @ 500mA, 4.5V

1.5V @ 250μA

25V

-

-

-

-

-

-

Surface Mount

-

-

-

-55°C~150°C TJ

1997

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

350mW Ta

-

-

-

-

-

63pF @ 10V

460mA Ta

1.5nC @ 4.5V

-

2.7V 4.5V

-8V

-

-

-

-

-

-

-

-

-

-

-

-

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-

SOT-23

-

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-

FDV303N vs FDV304P_NB8U003
FDV302P_NB8V001

Fairchild/ON Semiconductor

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-

-

1.5V @ 250µA

MOSFET (Metal Oxide)

SOT-23

-

10 Ohm @ 200mA, 4.5V

350mW (Ta)

Cut Tape (CT)

TO-236-3, SC-59, SOT-23-3

-55°C ~ 150°C (TJ)

Surface Mount

11pF @ 10V

0.31nC @ 4.5V

P-Channel

-

25V

120mA (Ta)

FDV303N vs FDV302P_NB8V001