Fairchild/ON Semiconductor FDV302P

Name: FDV302P
Brand: Fairchild/ON Semiconductor
SKU: 2848361-FDV302P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDV302P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848361-FDV302P

Description:: MOSFET P-CH 25V 120MA SOT-23

ECAD Model:

Datasheet:: FDV302P

Part Pictures

Specifications

Fairchild/ON Semiconductor FDV302P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDV302P.

Lifecycle Status
ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
13Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-120mA
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
5 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11pF @ 10V
Current - Continuous Drain (Id) @ 25°C
120mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.31nC @ 4.5V
Rise Time
8ns
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
120mA
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
-8V
Drain to Source Breakdown Voltage
-25V
Dual Supply Voltage
-25V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-1 V
Height
1.11mm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDV302P Description
Our exclusive high cell density DMOS technology is used to make the FDV302P transistor. This extremely dense technique is specifically designed to reduce on-state resistance. This device was created specifically to replace digital transistors in low-voltage applications. This single P-channel FET can replace numerous digital transistors with various bias resistors, such as the DTCx and DCDx series, because bias resistors are not required.

FDV302P Features
Gate drive needs are very minimal, allowing direct operation in 3V circuits. VGS(th) < 1.5V.
For ESD toughness, use a Gate-Source Zener.
Human Body Model >6kV
SOT-23 surface mount package is a compact industry standard.
One DMOS FET can replace multiple PNP digital transistors (DTCx and DCDx).

FDV302P Applications
FDV302P is intended for general use and can be used in a variety of situations.

FDV302P More Descriptions

Transistor MOSFET P-Channel 25V 125mA 350mW Surface Mount SOT-23
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 350 mW
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
MOSFET, P, -25V, 0.12A, DIGITAL, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -120mA; Drain Source Voltage Vds: -25V; On Resistance Rds(on): 7.9ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; ESD HBM: 6kV; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 500mA; SMD Marking: 302P; Tape Width: 8mm; Voltage Vds Typ: -25V; Voltage Vgs Max: -1V; Voltage Vgs Rds on Measurement: -4.5V; Voltage Vgs th Max: -1.5V

Product Comparison

The three parts on the right have similar specifications to FDV302P.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Continuous Drain Current (Id) @ 25°C

View Compare
FDV302P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 16 hours ago)

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

yes

Active

1 (Unlimited)

3

EAR99

13Ohm

LOGIC LEVEL COMPATIBLE

Other Transistors

-25V

MOSFET (Metal Oxide)

DUAL

GULL WING

-120mA

1

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

5 ns

P-Channel

SWITCHING

10 Ω @ 200mA, 4.5V

1.5V @ 250μA

11pF @ 10V

120mA Ta

0.31nC @ 4.5V

8ns

25V

2.7V 4.5V

±8V

8 ns

9 ns

120mA

-1V

-8V

-25V

-25V

150°C

-1 V

1.11mm

2.92mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDV301N

Fairchild/ON Semiconductor

-

-

-

-

-

SOT23-3

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDV302P vs FDV301N
FDV302P_NB8V001

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.5V @ 250µA

MOSFET (Metal Oxide)

SOT-23

-

10 Ohm @ 200mA, 4.5V

350mW (Ta)

Cut Tape (CT)

TO-236-3, SC-59, SOT-23-3

-55°C ~ 150°C (TJ)

Surface Mount

11pF @ 10V

0.31nC @ 4.5V

P-Channel

-

25V

120mA (Ta)

-

FDV302P vs FDV302P_NB8V001
FDV303N

Fairchild/ON Semiconductor

-

-

-

-

-

SOT-23

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

80mΩ @ 2A,4.5V

1.3V @ 250uA

-

-

-

-

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2A

FDV302P vs FDV303N