Fairchild/ON Semiconductor FDV305N

Name: FDV305N
Brand: Fairchild/ON Semiconductor
SKU: 2478029-FDV305N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDV305N

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478029-FDV305N

Description:: MOSFET N-CH 20V 0.9A SOT-23

ECAD Model:

Datasheet:: FDV305N

Part Pictures

Specifications

Fairchild/ON Semiconductor FDV305N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDV305N.

Lifecycle Status
ACTIVE (Last Updated: 17 hours ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
220MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
900mA
Number of Elements
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
Turn On Delay Time
4.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
220m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
109pF @ 10V
Current - Continuous Drain (Id) @ 25°C
900mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 4.5V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
900mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
0.9A
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDV305N Description
The FDV305N is a high-voltage N-channel MOSFET that uses the PowerTrench? technology. It was designed with a load switch and battery protection in mind. The PowerTrench technology is used in this 20V N-Channel MOSFET. It has been designed with power management in mind.

FDV305N Features
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS (ON)

FDV305N Applications
This product is general usage and suitable for many different applications.
Load Switch
Battery Protection
Power Management

FDV305N More Descriptions

N-Channel 20 V 220 mOhm SMT PowerTrench Mosfet - SOT-23-3
N-Channel PowerTrench® MOSFET 20V, 0.9A, 220mΩ
Trans MOSFET N-CH 20V 0.9A 3-Pin SOT-23 T/R - Tape and Reel
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Product Comparison

The three parts on the right have similar specifications to FDV305N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDV305N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 17 hours ago)

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2003

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

220MOhm

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

900mA

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

4.5 ns

N-Channel

SWITCHING

220m Ω @ 900mA, 4.5V

1.5V @ 250μA

109pF @ 10V

900mA Ta

1.5nC @ 4.5V

7ns

2.5V 4.5V

±12V

7 ns

8 ns

900mA

1V

12V

0.9A

20V

20V

930μm

2.92mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDV304P_NB8U003

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

1997

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

350mW Ta

-

-

-

-

P-Channel

-

1.1Ohm @ 500mA, 4.5V

1.5V @ 250μA

63pF @ 10V

460mA Ta

1.5nC @ 4.5V

-

2.7V 4.5V

-8V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT-23

25V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDV305N vs FDV304P_NB8U003
FDV301N

Fairchild/ON Semiconductor

-

-

-

-

-

SOT23-3

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDV305N vs FDV301N
FDV302P_NB8V001

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.5V @ 250µA

MOSFET (Metal Oxide)

SOT-23

-

10 Ohm @ 200mA, 4.5V

350mW (Ta)

Cut Tape (CT)

TO-236-3, SC-59, SOT-23-3

-55°C ~ 150°C (TJ)

Surface Mount

11pF @ 10V

0.31nC @ 4.5V

P-Channel

-

25V

120mA (Ta)

FDV305N vs FDV302P_NB8V001