Fairchild/ON Semiconductor FDT434P

Name: FDT434P
Brand: Fairchild/ON Semiconductor
SKU: 2849860-FDT434P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDT434P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849860-FDT434P

Description:: MOSFET P-CH 20V 6A SOT-223

ECAD Model:

Datasheet:: FDT434P

Specifications

Fairchild/ON Semiconductor FDT434P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDT434P.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.187pF @ 10V
Current - Continuous Drain (Id) @ 25°C
6A Ta
Gate Charge (Qg) (Max) @ Vgs
19nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Drain Current-Max (Abs) (ID)
6A
Drain-source On Resistance-Max
0.05Ohm
Pulsed Drain Current-Max (IDM)
30A
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

FDT434P Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.187pF @ 10V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

FDT434P Features
based on its rated peak drain current 30A.
a 20V drain to source voltage (Vdss)

FDT434P Applications
There are a lot of Rochester Electronics, LLC
FDT434P applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FDT434P More Descriptions

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 50mΩ
P-Channel 20 V 0.05 Ohm PowerTrench Mosfet - SOT-223
Trans MOSFET P-CH 20V 6A 4-Pin (3 Tab) SOT-223 T/R
ON SEMICONDUCTOR - FDT434P - P CHANNEL MOSFET, -20V, 6A, SOT-223
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-223 ;RoHS Compliant: Yes
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Certification