Fairchild/ON Semiconductor FDT458P

Name: FDT458P
Brand: Fairchild/ON Semiconductor
SKU: 2480745-FDT458P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDT458P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2480745-FDT458P

Description:: MOSFET P-CH 30V 3.4A SOT-223

ECAD Model:

Datasheet:: FDT458P

Specifications

Fairchild/ON Semiconductor FDT458P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDT458P.

Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
TIN
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-3.4A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3W
Case Connection
DRAIN
Turn On Delay Time
4.5 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
130m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
205pF @ 15V
Current - Continuous Drain (Id) @ 25°C
3.4A Ta
Gate Charge (Qg) (Max) @ Vgs
3.5nC @ 10V
Rise Time
12.5ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
3.4A
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Max Junction Temperature (Tj)
150°C
Height
1.8mm
Length
6.5mm
Width
3.56mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDT458P Description FDT458P MOSFET is a family of high-voltage MOSFETs built on a planar stripe with DMOS. FDT458P P-Channel MOSFET is designed to improve the overall efficiency of DC/DC converters. FDT458P ON Semiconductor is ideal for Battery Charging Circuit, Motor Drives, as well as Uninterruptible Power Suppliess. FDT458P Features Fast switching speed High performance trench technology High power and current handling capability Low gate charge (2.5nC typical)
FDT458P Applications Battery Charging Circuit Motor Drives Uninterruptible Power Supplies

FDT458P More Descriptions

Trans MOSFET P-CH 30V 3.4A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
Single P-Channel 30 V 210 mOhm 3.5 nC 3 W PowerTrench SMT Mosfet - SOT-223
P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.4A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Certification