Fairchild/ON Semiconductor FDT459N

Name: FDT459N
Brand: Fairchild/ON Semiconductor
SKU: 2481464-FDT459N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDT459N

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481464-FDT459N

Description:: MOSFET N-CH 30V 6.5A SOT-223

ECAD Model:

Datasheet:: FDT459N

Specifications

Fairchild/ON Semiconductor FDT459N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDT459N.

Lifecycle Status
LIFETIME (Last Updated: 11 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
250.2mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
6.5A
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Power Dissipation-Max
3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3W
Case Connection
DRAIN
Turn On Delay Time
5.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
35m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
365pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.5A Ta
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Rise Time
8.2ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
6 ns
Continuous Drain Current (ID)
6.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
20A
Height
1.7mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDT459N Description
FDT459N belongs to the family of N-channel enhancement-mode field-effect transistors manufactured by ON Semiconductor based on the proprietary, high cell density, DMOS technology for low on-state resistance and advanced switching performance. Based on its high quality and reliable performance, it is well suited for low-voltage, low-current applications.

FDT459N Features
Low gate charge
Low on-state resistance
Improved dv/dt capability
Advanced switching performance
Available in the SOT-223 package

FDT459N Applications
DC motor control
Power management
Battery-powered circuits

FDT459N More Descriptions

N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ
Trans MOSFET N-CH 30V 6.5A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

Certification