Fairchild/ON Semiconductor FDS8958

Name: FDS8958
Brand: Fairchild/ON Semiconductor
SKU: 2477727-FDS8958
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8958

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477727-FDS8958

Description:: MOSFET N/P-CH 30V 7A/5A 8SOIC

ECAD Model:

Datasheet:: FDS8958

Specifications

Fairchild/ON Semiconductor FDS8958 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8958.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
Tin (Sn)
Max Power Dissipation
900mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
7A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
789pF @ 10V
Current - Continuous Drain (Id) @ 25°C
7A 5A
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Rise Time
9.7ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12.3 ns
Turn-Off Delay Time
19.8 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.028Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
20A
Avalanche Energy Rating (Eas)
54 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

FDS8958 Description
The sophisticated PowerTrench method from Fairchild Semiconductor is used to create these dual N- and P-Channel enhancement mode power field effect transistors. This process has been carefully designed to reduce on-state resistance while maintaining exceptional switching performance. These gadgets work well in battery- and low-voltage applications that need quick switching and little in-line power loss.

FDS8958 Features
brisk switching rate
A surface mount package with high handling and power capabilities that is widely used

FDS8958 Applications
Switching applications

FDS8958 More Descriptions

MOSFET N/P-CH 30V 7A/5A 8SOIC
MOSFETs 30V Dual N & P-Ch PowerTrench MOSFET
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE Product Description Demo for Development.

Product Comparison

The three parts on the right have similar specifications to FDS8958.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

FET Technology

FET Feature

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Number of Pins

Weight

ECCN Code

Resistance

Subcategory

Threshold Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Termination

Dual Supply Voltage

Nominal Vgs

Contact Plating

Voltage - Rated DC

Element Configuration

Turn On Delay Time

View Compare
FDS8958

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2004

e3

yes

Obsolete

1 (Unlimited)

8

Tin (Sn)

900mW

DUAL

GULL WING

NOT SPECIFIED

7A

NOT SPECIFIED

R-PDSO-G8

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

2W

N and P-Channel

SWITCHING

28m Ω @ 7A, 10V

3V @ 250μA

789pF @ 10V

7A 5A

26nC @ 10V

9.7ns

N-CHANNEL AND P-CHANNEL

12.3 ns

19.8 ns

5A

20V

7A

0.028Ohm

30V

20A

54 mJ

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS8958B

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

8

Tin (Sn)

900mW

DUAL

GULL WING

-

-

-

-

2

-

ENHANCEMENT MODE

1.6W

N and P-Channel

SWITCHING

26m Ω @ 6.4A, 10V

3V @ 250μA

540pF @ 15V

6.4A 4.5A

12nC @ 10V

6ns

N-CHANNEL AND P-CHANNEL

6 ns

17 ns

4.5A

25V

6.4A

-

30V

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 week ago)

18 Weeks

8

187mg

EAR99

26MOhm

Other Transistors

2V

1.575mm

4.9mm

3.9mm

No SVHC

No

-

-

-

-

-

-

-

FDS8958 vs FDS8958B
FDS8858CZ

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

Tin (Sn)

900mW

DUAL

GULL WING

-

-

-

-

2

-

ENHANCEMENT MODE

2W

N and P-Channel

SWITCHING

17m Ω @ 8.6A, 10V

3V @ 250μA

1205pF @ 15V

8.6A 7.3A

24nC @ 10V

10ns

N-CHANNEL AND P-CHANNEL

16 ns

33 ns

8.6A

25V

-

-

-60V

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 2 days ago)

18 Weeks

8

187mg

EAR99

17mOhm

Other Transistors

1.6V

1.5mm

5mm

4mm

No SVHC

No

SMD/SMT

30V

1.6 V

-

-

-

-

FDS8958 vs FDS8858CZ
FDS8949

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

-

2W

-

GULL WING

-

6A

-

-

2

-

ENHANCEMENT MODE

2W

2 N-Channel (Dual)

-

29m Ω @ 6A, 10V

3V @ 250μA

955pF @ 20V

-

11nC @ 5V

5ns

-

3 ns

23 ns

6A

20V

6A

-

40V

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 6 days ago)

12 Weeks

8

187mg

EAR99

29mOhm

FET General Purpose Power

1.9V

1.5mm

5mm

4mm

No SVHC

No

SMD/SMT

40V

1.9 V

Tin

40V

Dual

9 ns

FDS8958 vs FDS8949