FDS8978

Fairchild/ON Semiconductor FDS8978

Part Number:
FDS8978
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847705-FDS8978
Description:
MOSFET 2N-CH 30V 7.5A 8SOIC
ECAD Model:
Datasheet:
FDS8978

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Specifications
Fairchild/ON Semiconductor FDS8978 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8978.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    18MOhm
  • Max Power Dissipation
    1.6W
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    7 ns
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    18m Ω @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1270pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    37ns
  • Drain to Source Voltage (Vdss)
    30V
  • Fall Time (Typ)
    37 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    7.5A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS8978         Description
  The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switched pulse width modulation controllers. It has been optimized for low gate charge, low RDS and fast switching speed.
FDS8978                Features
? rDS(on) = 18 m, VGS = 10 V, ID = 7.5 A ? rDS(on) = 21 m, VGS = 4.5 V, ID = 6.9 A ? High Performance Trench Technology for Extremely Low rDS(on) ? Low Gate Charge ? High Power and Current Handling Capability ? 100% Rg Tested ? These Devices are Pb?Free and are RoHS Compliant
FDS8978              Applications
? DC/DC Converters    



FDS8978 More Descriptions
Transistor MOSFET Array Dual N-CH 30V 7.5A 8-Pin SOIC T/R - Tape and Reel
N-Channel 30 V 18 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 7.5A, 18mΩ
TAPE REEL/30V,7.5A,18M OHM, DUAL,NCH POWER TRENCH MOSFET
MOSFET, DUAL N CH, 30V, 7.5A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.014ohm; Rds(on) Test; Available until stocks are exhausted
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Product Comparison
The three parts on the right have similar specifications to FDS8978.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Power Dissipation
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Operating Mode
    Transistor Application
    Current - Continuous Drain (Id) @ 25°C
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    FET Technology
    Radiation Hardening
    Termination
    Dual Supply Voltage
    Nominal Vgs
    Max Operating Temperature
    Min Operating Temperature
    Current Rating
    Power - Max
    Avalanche Energy Rating (Eas)
    View Compare
  • FDS8978
    FDS8978
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    Active
    1 (Unlimited)
    18MOhm
    1.6W
    2
    Dual
    1.6W
    7 ns
    2 N-Channel (Dual)
    18m Ω @ 7.5A, 10V
    2.5V @ 250μA
    1270pF @ 15V
    26nC @ 10V
    37ns
    30V
    37 ns
    48 ns
    7.5A
    2.5V
    20V
    30V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS8958B
    ACTIVE (Last Updated: 1 week ago)
    18 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    Active
    1 (Unlimited)
    26MOhm
    900mW
    2
    -
    1.6W
    -
    N and P-Channel
    26m Ω @ 6.4A, 10V
    3V @ 250μA
    540pF @ 15V
    12nC @ 10V
    6ns
    -
    6 ns
    17 ns
    4.5A
    2V
    25V
    30V
    Logic Level Gate
    1.575mm
    4.9mm
    3.9mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    SILICON
    e3
    yes
    8
    EAR99
    Tin (Sn)
    Other Transistors
    DUAL
    GULL WING
    ENHANCEMENT MODE
    SWITCHING
    6.4A 4.5A
    N-CHANNEL AND P-CHANNEL
    6.4A
    METAL-OXIDE SEMICONDUCTOR
    No
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS8858CZ
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    Active
    1 (Unlimited)
    17mOhm
    900mW
    2
    -
    2W
    -
    N and P-Channel
    17m Ω @ 8.6A, 10V
    3V @ 250μA
    1205pF @ 15V
    24nC @ 10V
    10ns
    -
    16 ns
    33 ns
    8.6A
    1.6V
    25V
    -60V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    SILICON
    e3
    yes
    8
    EAR99
    Tin (Sn)
    Other Transistors
    DUAL
    GULL WING
    ENHANCEMENT MODE
    SWITCHING
    8.6A 7.3A
    N-CHANNEL AND P-CHANNEL
    -
    METAL-OXIDE SEMICONDUCTOR
    No
    SMD/SMT
    30V
    1.6 V
    -
    -
    -
    -
    -
  • FDS8958A
    ACTIVE (Last Updated: 15 hours ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    Tape & Reel (TR)
    PowerTrench®
    2007
    Active
    1 (Unlimited)
    28mOhm
    2W
    2
    -
    2W
    -
    N and P-Channel
    28m Ω @ 7A, 10V
    3V @ 250μA
    575pF @ 15V
    16nC @ 10V
    13ns
    -
    9 ns
    14 ns
    7A
    1.9V
    20V
    30V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    e3
    yes
    8
    -
    -
    -
    DUAL
    GULL WING
    ENHANCEMENT MODE
    SWITCHING
    7A 5A
    N-CHANNEL AND P-CHANNEL
    7A
    METAL-OXIDE SEMICONDUCTOR
    No
    SMD/SMT
    30V
    1.9 V
    150°C
    -55°C
    7A
    900mW
    54 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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