Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDS89141
FDS89141

Fairchild/ON Semiconductor FDS89141

Part Number:
FDS89141
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3069710-FDS89141
Description:
MOSFET 2N-CH 100V 3.5A 8SOIC
ECAD Model:
Datasheet:
FDS89141

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDS89141 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS89141.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    11 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    62MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    31W
  • Terminal Form
    GULL WING
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    31W
  • Turn On Delay Time
    5 ns
  • Power - Max
    1.6W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    62m Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    398pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    7.1nC @ 10V
  • Rise Time
    1.4ns
  • Drain to Source Voltage (Vdss)
    100V
  • Fall Time (Typ)
    2.2 ns
  • Turn-Off Delay Time
    9.8 ns
  • Continuous Drain Current (ID)
    3.5A
  • Threshold Voltage
    3.1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Avalanche Energy Rating (Eas)
    37 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    4mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS89141   Description
 The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.
  FDS89141     Features   Shielded Gate MOSFET Technology Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package 100% UIL Tested RoHS Compliant    FDS89141     Applications
This product is general usage and suitable for many different applications. Synchronous Rectifier Primary Switch for Bridge Topology  



FDS89141 More Descriptions
Transistor MOSFET Array Dual N-CH 100V 3.5A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET 100V, 3.5A, 62mΩ
MOSFET Array, Dual N Channel, 100 V, 3.5 A, 62 Milliohms, SOIC, 8 Pins
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, NN CH, 100V, 3.5A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to FDS89141.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Current Rating
    Current - Continuous Drain (Id) @ 25°C
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Nominal Vgs
    Voltage - Rated DC
    View Compare
  • FDS89141
    FDS89141
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    11 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    62MOhm
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    31W
    GULL WING
    2
    Dual
    ENHANCEMENT MODE
    31W
    5 ns
    1.6W
    2 N-Channel (Dual)
    SWITCHING
    62m Ω @ 3.5A, 10V
    4V @ 250μA
    398pF @ 50V
    7.1nC @ 10V
    1.4ns
    100V
    2.2 ns
    9.8 ns
    3.5A
    3.1V
    20V
    100V
    37 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.5mm
    4mm
    5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS8958A
    FDS8958A
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 15 hours ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -
    Tape & Reel (TR)
    PowerTrench®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    28mOhm
    -
    -
    -
    2W
    GULL WING
    2
    -
    ENHANCEMENT MODE
    2W
    -
    900mW
    N and P-Channel
    SWITCHING
    28m Ω @ 7A, 10V
    3V @ 250μA
    575pF @ 15V
    16nC @ 10V
    13ns
    -
    9 ns
    14 ns
    7A
    1.9V
    20V
    30V
    54 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    SMD/SMT
    150°C
    -55°C
    DUAL
    7A
    7A 5A
    N-CHANNEL AND P-CHANNEL
    7A
    30V
    1.9 V
    -
    FDS89141 vs FDS8958A
  • FDS8978
    FDS8978
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    -
    -
    Active
    1 (Unlimited)
    -
    -
    18MOhm
    -
    -
    -
    1.6W
    -
    2
    Dual
    -
    1.6W
    7 ns
    -
    2 N-Channel (Dual)
    -
    18m Ω @ 7.5A, 10V
    2.5V @ 250μA
    1270pF @ 15V
    26nC @ 10V
    37ns
    30V
    37 ns
    48 ns
    7.5A
    2.5V
    20V
    30V
    -
    -
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    Tin
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS89141 vs FDS8978
  • FDS8949
    FDS8949
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    29mOhm
    -
    -
    FET General Purpose Power
    2W
    GULL WING
    2
    Dual
    ENHANCEMENT MODE
    2W
    9 ns
    -
    2 N-Channel (Dual)
    -
    29m Ω @ 6A, 10V
    3V @ 250μA
    955pF @ 20V
    11nC @ 5V
    5ns
    -
    3 ns
    23 ns
    6A
    1.9V
    20V
    40V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    SMD/SMT
    -
    -
    -
    6A
    -
    -
    6A
    40V
    1.9 V
    40V
    FDS89141 vs FDS8949
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDS89141
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.