Fairchild/ON Semiconductor FDS8858CZ

Name: FDS8858CZ
Brand: Fairchild/ON Semiconductor
SKU: 3069639-FDS8858CZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8858CZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069639-FDS8858CZ

Description:: MOSFET N/P-CH 30V 8.6A/7.3A 8-SO

ECAD Model:

Datasheet:: FDS8858CZ

Specifications

Fairchild/ON Semiconductor FDS8858CZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8858CZ.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
17mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17m Ω @ 8.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C
8.6A 7.3A
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Rise Time
10ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
16 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
8.6A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-60V
Dual Supply Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.6 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS8858CZ Description
These dual N and P-channel enhanced mode MOSFET are advanced power trench processes produced by on Semiconductor and are tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power loss and FAS switches.
FDS8858CZ Applications
inverter Synchronous Buck FDS8858CZ Features
Q1:N-Channel Maxrps(on)=17mΩatVGs=10Vp=8.6A Max ros(on)=20mΩ at VGs=4.5V1=7.3A Q2: P-Channel Max rps(on)=20.5mΩatVGs=-10VID=-7.3A Max rps(on)=34.5mΩatVGs=-4.5V1p=-5.6A High power and handing capability in a widely used surface mount package .Fast switching speed

FDS8858CZ More Descriptions

Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC T/R / MOSFET N/P-CH 30V 8.6A/7.3A 8-SO
Dual N/P-Channel 30 V 1.6 W 24/46 nC Silicon Surface Mount Mosfet - SOIC-8
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Product Comparison

The three parts on the right have similar specifications to FDS8858CZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Number of Elements

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Element Configuration

Turn On Delay Time

Power - Max

Drain to Source Voltage (Vdss)

Avalanche Energy Rating (Eas)

Drain Current-Max (Abs) (ID)

Contact Plating

View Compare
FDS8858CZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

17mOhm

Tin (Sn)

Other Transistors

900mW

DUAL

GULL WING

2

ENHANCEMENT MODE

2W

N and P-Channel

SWITCHING

17m Ω @ 8.6A, 10V

3V @ 250μA

1205pF @ 15V

8.6A 7.3A

24nC @ 10V

10ns

N-CHANNEL AND P-CHANNEL

16 ns

33 ns

8.6A

1.6V

25V

-60V

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.6 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
FDS89141

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

11 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2010

e3

yes

Active

1 (Unlimited)

8

-

EAR99

62MOhm

Tin (Sn)

FET General Purpose Power

31W

-

GULL WING

2

ENHANCEMENT MODE

31W

2 N-Channel (Dual)

SWITCHING

62m Ω @ 3.5A, 10V

4V @ 250μA

398pF @ 50V

-

7.1nC @ 10V

1.4ns

-

2.2 ns

9.8 ns

3.5A

3.1V

20V

100V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

1.5mm

4mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

ULTRA-LOW RESISTANCE

Dual

5 ns

1.6W

100V

37 mJ

-

-

FDS8858CZ vs FDS89141
FDS8958B

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

8

-

EAR99

26MOhm

Tin (Sn)

Other Transistors

900mW

DUAL

GULL WING

2

ENHANCEMENT MODE

1.6W

N and P-Channel

SWITCHING

26m Ω @ 6.4A, 10V

3V @ 250μA

540pF @ 15V

6.4A 4.5A

12nC @ 10V

6ns

N-CHANNEL AND P-CHANNEL

6 ns

17 ns

4.5A

2V

25V

30V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

1.575mm

4.9mm

3.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

6.4A

-

FDS8858CZ vs FDS8958B
FDS8978

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

-

-

Active

1 (Unlimited)

-

-

-

18MOhm

-

-

1.6W

-

-

2

-

1.6W

2 N-Channel (Dual)

-

18m Ω @ 7.5A, 10V

2.5V @ 250μA

1270pF @ 15V

-

26nC @ 10V

37ns

-

37 ns

48 ns

7.5A

2.5V

20V

30V

-

-

Logic Level Gate

-

1.5mm

5mm

4mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

Dual

7 ns

-

30V

-

-

Tin

FDS8858CZ vs FDS8978