Fairchild/ON Semiconductor FDS8962C
- Part Number:
- FDS8962C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069783-FDS8962C
- Description:
- MOSFET N/P-CH 30V 7A/5A 8SOIC
- ECAD Model:
-
- Datasheet:
- FDS8962C
Fairchild/ON Semiconductor FDS8962C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8962C.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2002
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation900mW
- Current Rating7A
- Number of Elements2
- Power Dissipation2W
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs30m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds575pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7A 5A
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Rise Time13ns
- Fall Time (Typ)9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET FeatureLogic Level Gate
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDS8962C Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using Fairchild's advanced PowerTritch process, which is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8962C Features
■ Q1: N-Channel 7.0A, 30V RDS(on) = 0.030? @ VGS = 10V RDS(on) = 0.044? @ VGS = 4.5V ■ Q2: P-Channel -5A, -30V RDS(on) = 0.052? @ VGS = -10V RDS(on) = 0.080? @ VGS = -4.5V ■ Fast switching speed ■ High power and handling capability in a widely used surface mount package FDS8962C Applications
low-voltage and battery-powered applications
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using Fairchild's advanced PowerTritch process, which is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8962C Features
■ Q1: N-Channel 7.0A, 30V RDS(on) = 0.030? @ VGS = 10V RDS(on) = 0.044? @ VGS = 4.5V ■ Q2: P-Channel -5A, -30V RDS(on) = 0.052? @ VGS = -10V RDS(on) = 0.080? @ VGS = -4.5V ■ Fast switching speed ■ High power and handling capability in a widely used surface mount package FDS8962C Applications
low-voltage and battery-powered applications
FDS8962C More Descriptions
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R
30V Dual N & P-Channel PowerTrench® MOSFET
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIETAPE REEL / SO8, DUAL NCH & PCH POWER TRENCH MOSFET
SMALL SIGNAL BIPOLAR TRANSISTOR
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
30V Dual N & P-Channel PowerTrench® MOSFET
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE
SMALL SIGNAL BIPOLAR TRANSISTOR
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The three parts on the right have similar specifications to FDS8962C.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Max Power DissipationCurrent RatingNumber of ElementsPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureRoHS StatusLead FreeLifecycle StatusFactory Lead TimeTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTerminal PositionTerminal FormOperating ModeTransistor ApplicationPolarity/Channel TypeThreshold VoltageDual Supply VoltageFET TechnologyNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningContact PlatingMax Operating TemperatureMin Operating TemperaturePower - MaxDrain Current-Max (Abs) (ID)Avalanche Energy Rating (Eas)Voltage - Rated DCElement ConfigurationTurn On Delay TimeView Compare
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FDS8962CSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2002yesObsolete1 (Unlimited)900mW7A22WN and P-Channel30m Ω @ 7A, 10V3V @ 250μA575pF @ 15V7A 5A26nC @ 10V13ns9 ns14 ns5A20V30VLogic Level GateRoHS CompliantLead Free---------------------------------- -
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2006yesActive1 (Unlimited)900mW-22WN and P-Channel17m Ω @ 8.6A, 10V3V @ 250μA1205pF @ 15V8.6A 7.3A24nC @ 10V10ns16 ns33 ns8.6A25V-60VLogic Level GateROHS3 CompliantLead FreeACTIVE (Last Updated: 2 days ago)18 WeeksSILICONe38SMD/SMTEAR9917mOhmTin (Sn)Other TransistorsDUALGULL WINGENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNEL1.6V30VMETAL-OXIDE SEMICONDUCTOR1.6 V1.5mm5mm4mmNo SVHCNo---------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--Tape & Reel (TR)PowerTrench®2007yesActive1 (Unlimited)2W7A22WN and P-Channel28m Ω @ 7A, 10V3V @ 250μA575pF @ 15V7A 5A16nC @ 10V13ns9 ns14 ns7A20V30VLogic Level GateROHS3 CompliantLead FreeACTIVE (Last Updated: 15 hours ago)18 Weeks-e38SMD/SMT-28mOhm--DUALGULL WINGENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNEL1.9V30VMETAL-OXIDE SEMICONDUCTOR1.9 V1.5mm5mm4mmNo SVHCNoTin150°C-55°C900mW7A54 mJ---
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2006yesActive1 (Unlimited)2W6A22W2 N-Channel (Dual)29m Ω @ 6A, 10V3V @ 250μA955pF @ 20V-11nC @ 5V5ns3 ns23 ns6A20V40VLogic Level GateROHS3 CompliantLead FreeACTIVE (Last Updated: 6 days ago)12 WeeksSILICONe38SMD/SMTEAR9929mOhm-FET General Purpose Power-GULL WINGENHANCEMENT MODE--1.9V40VMETAL-OXIDE SEMICONDUCTOR1.9 V1.5mm5mm4mmNo SVHCNoTin---6A-40VDual9 ns
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