FDS8949

Fairchild/ON Semiconductor FDS8949

Part Number:
FDS8949
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847698-FDS8949
Description:
MOSFET 2N-CH 40V 6A 8-SOIC
ECAD Model:
Datasheet:
FDS8949

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Specifications
Fairchild/ON Semiconductor FDS8949 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8949.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    29mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    40V
  • Max Power Dissipation
    2W
  • Terminal Form
    GULL WING
  • Current Rating
    6A
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    9 ns
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    955pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 5V
  • Rise Time
    5ns
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    6A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6A
  • Drain to Source Breakdown Voltage
    40V
  • Dual Supply Voltage
    40V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.9 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON SEMICONDUCTOR FDS8949 is a dual N-channel MOSFET array designed for use in a variety of applications. This device features a maximum drain-source voltage of 40V and is available in a SOIC package. The FDS8949 is designed to provide superior performance in terms of power efficiency, switching speed, and low on-resistance. It is also designed to be highly reliable and robust, making it suitable for use in a wide range of applications. The FDS8949 is available in a full reel, making it easy to integrate into production lines. This device is ideal for use in power management, motor control, and other high-power applications.
FDS8949 More Descriptions
Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ
Trans MOSFET N-CH 40V 6A 8-Pin SOIC T/R / MOSFET 2N-CH 40V 6A 8-SOIC
ON SEMICONDUCTOR - FDS8949 - DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
Product Comparison
The three parts on the right have similar specifications to FDS8949.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Current Rating
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Additional Feature
    Power - Max
    Transistor Application
    Drain to Source Voltage (Vdss)
    Avalanche Energy Rating (Eas)
    Terminal Position
    Current - Continuous Drain (Id) @ 25°C
    Polarity/Channel Type
    View Compare
  • FDS8949
    FDS8949
    ACTIVE (Last Updated: 6 days ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    29mOhm
    FET General Purpose Power
    40V
    2W
    GULL WING
    6A
    2
    Dual
    ENHANCEMENT MODE
    2W
    9 ns
    2 N-Channel (Dual)
    29m Ω @ 6A, 10V
    3V @ 250μA
    955pF @ 20V
    11nC @ 5V
    5ns
    3 ns
    23 ns
    6A
    1.9V
    20V
    6A
    40V
    40V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.9 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS89141
    ACTIVE (Last Updated: 6 days ago)
    11 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    62MOhm
    FET General Purpose Power
    -
    31W
    GULL WING
    -
    2
    Dual
    ENHANCEMENT MODE
    31W
    5 ns
    2 N-Channel (Dual)
    62m Ω @ 3.5A, 10V
    4V @ 250μA
    398pF @ 50V
    7.1nC @ 10V
    1.4ns
    2.2 ns
    9.8 ns
    3.5A
    3.1V
    20V
    -
    100V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    1.5mm
    4mm
    5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    1.6W
    SWITCHING
    100V
    37 mJ
    -
    -
    -
  • FDS8858CZ
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    17mOhm
    Other Transistors
    -
    900mW
    GULL WING
    -
    2
    -
    ENHANCEMENT MODE
    2W
    -
    N and P-Channel
    17m Ω @ 8.6A, 10V
    3V @ 250μA
    1205pF @ 15V
    24nC @ 10V
    10ns
    16 ns
    33 ns
    8.6A
    1.6V
    25V
    -
    -60V
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.6 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    SWITCHING
    -
    -
    DUAL
    8.6A 7.3A
    N-CHANNEL AND P-CHANNEL
  • FDS8978
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    18MOhm
    -
    -
    1.6W
    -
    -
    2
    Dual
    -
    1.6W
    7 ns
    2 N-Channel (Dual)
    18m Ω @ 7.5A, 10V
    2.5V @ 250μA
    1270pF @ 15V
    26nC @ 10V
    37ns
    37 ns
    48 ns
    7.5A
    2.5V
    20V
    -
    30V
    -
    -
    Logic Level Gate
    -
    1.5mm
    5mm
    4mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    30V
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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