Fairchild/ON Semiconductor FDS8949
- Part Number:
- FDS8949
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847698-FDS8949
- Description:
- MOSFET 2N-CH 40V 6A 8-SOIC
- Datasheet:
- FDS8949
Fairchild/ON Semiconductor FDS8949 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8949.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance29mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC40V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Current Rating6A
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time9 ns
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs29m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds955pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
- Rise Time5ns
- Fall Time (Typ)3 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)6A
- Threshold Voltage1.9V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Drain to Source Breakdown Voltage40V
- Dual Supply Voltage40V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs1.9 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON SEMICONDUCTOR FDS8949 is a dual N-channel MOSFET array designed for use in a variety of applications. This device features a maximum drain-source voltage of 40V and is available in a SOIC package. The FDS8949 is designed to provide superior performance in terms of power efficiency, switching speed, and low on-resistance. It is also designed to be highly reliable and robust, making it suitable for use in a wide range of applications. The FDS8949 is available in a full reel, making it easy to integrate into production lines. This device is ideal for use in power management, motor control, and other high-power applications.
FDS8949 More Descriptions
Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ
Trans MOSFET N-CH 40V 6A 8-Pin SOIC T/R / MOSFET 2N-CH 40V 6A 8-SOIC
ON SEMICONDUCTOR - FDS8949 - DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
Trans MOSFET N-CH 40V 6A 8-Pin SOIC T/R / MOSFET 2N-CH 40V 6A 8-SOIC
ON SEMICONDUCTOR - FDS8949 - DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
The three parts on the right have similar specifications to FDS8949.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishAdditional FeaturePower - MaxTransistor ApplicationDrain to Source Voltage (Vdss)Avalanche Energy Rating (Eas)Terminal PositionCurrent - Continuous Drain (Id) @ 25°CPolarity/Channel TypeView Compare
-
FDS8949ACTIVE (Last Updated: 6 days ago)12 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)8SMD/SMTEAR9929mOhmFET General Purpose Power40V2WGULL WING6A2DualENHANCEMENT MODE2W9 ns2 N-Channel (Dual)29m Ω @ 6A, 10V3V @ 250μA955pF @ 20V11nC @ 5V5ns3 ns23 ns6A1.9V20V6A40V40VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.9 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free----------
-
ACTIVE (Last Updated: 6 days ago)11 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)8-EAR9962MOhmFET General Purpose Power-31WGULL WING-2DualENHANCEMENT MODE31W5 ns2 N-Channel (Dual)62m Ω @ 3.5A, 10V4V @ 250μA398pF @ 50V7.1nC @ 10V1.4ns2.2 ns9.8 ns3.5A3.1V20V-100V-METAL-OXIDE SEMICONDUCTORLogic Level Gate-1.5mm4mm5mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)ULTRA-LOW RESISTANCE1.6WSWITCHING100V37 mJ---
-
ACTIVE (Last Updated: 2 days ago)18 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)8SMD/SMTEAR9917mOhmOther Transistors-900mWGULL WING-2-ENHANCEMENT MODE2W-N and P-Channel17m Ω @ 8.6A, 10V3V @ 250μA1205pF @ 15V24nC @ 10V10ns16 ns33 ns8.6A1.6V25V--60V30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.6 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)--SWITCHING--DUAL8.6A 7.3AN-CHANNEL AND P-CHANNEL
-
ACTIVE (Last Updated: 1 week ago)10 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg--55°C~150°C TJTape & Reel (TR)PowerTrench®2001--Active1 (Unlimited)---18MOhm--1.6W--2Dual-1.6W7 ns2 N-Channel (Dual)18m Ω @ 7.5A, 10V2.5V @ 250μA1270pF @ 15V26nC @ 10V37ns37 ns48 ns7.5A2.5V20V-30V--Logic Level Gate-1.5mm5mm4mmNo SVHC-ROHS3 CompliantLead Free----30V----
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
17 April 2024
TPS5450DDAR: High Performance Step-Down Switching Regulator
Ⅰ. Overview of TPS5450DDARⅡ. Technical parameters of TPS5450DDARⅢ. Simplified schematic of TPS5450DDARⅣ. Features and advantages of TPS5450DDARⅤ. How to configure the soft start function of TPS5450DDAR?Ⅵ. Concrete applications... -
17 April 2024
SI2302 Field Effect Transistor Characteristics, Use and Application Prospects
Ⅰ. Introduction to SI2302Ⅱ. Main characteristics of SI2302Ⅲ. SI2302 driving methodⅣ. Maximum ratings of SI2302Ⅴ. Tips for using SI2302Ⅵ. What can be used to replace SI2302?Ⅶ. Precautions for... -
18 April 2024
TDA2030A Audio Amplifier Manufacturer, Application, Precautions and TDA2030 vs TDA2030A
Ⅰ. TDA2030A descriptionⅡ. Manufacturer of TDA2030AⅢ. Pin voltage parameters of TDA2030AⅣ. Market demand for TDA2030AⅤ. Application circuit of TDA2030AⅥ. Which one is better, TDA2030A or LM1875?Ⅶ. Precautions for... -
18 April 2024
ADUM1200ARZ Digital Isolator: Symbol, Functions, Advantages and Application Cases
Ⅰ. Overview of ADUM1200ARZⅡ. Functions and technical standards of ADUM1200ARZⅢ. ADUM1200ARZ symbol, footprint and pin configurationⅣ. Compared with other optocouplers, what are the advantages of ADUM1200ARZ?Ⅴ. Schematic diagram...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.