Fairchild/ON Semiconductor FDS8958B

Name: FDS8958B
Brand: Fairchild/ON Semiconductor
SKU: 3069692-FDS8958B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS8958B

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069692-FDS8958B

Description:: MOSFET N/P-CH 30V 8SOIC

ECAD Model:

Datasheet:: FDS8958B

Specifications

Fairchild/ON Semiconductor FDS8958B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8958B.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
26MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
26m Ω @ 6.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.4A 4.5A
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Rise Time
6ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
6 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
4.5A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
6.4A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.575mm
Length
4.9mm
Width
3.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS8958B Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced PowerTritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching. FDS8958B Features Q1 N-Channel Max. RDS(on) = 26 m|? at VGS = 10 V, ID = 6.4 A Max. RDS(on) = 39 m|? at VGS = 4.5 V, ID = 5.2 A Q2 P-Channel Max. RDS(on) = 51 m|? at VGS = -10 V, ID = -4.5 A Max. RDS(on) = 80 m|? at VGS = -4.5 V, ID = -3.3 A HBM ESD protection level > 3.5 kV RoHS Compliant
FDS8958B Applications This product is general usage and suitable for many different applications. DC-DC Conversion BLU and Motor Drive Inverter

FDS8958B More Descriptions

Dual N & P-Channel 30 V 26 mO Surface Mount PowerTrench Mosfet - SOIC-8
Trans MOSFET N/P-CH 30V 6.4A/4.5A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N & P CH, 130V, 6.4A, SOIC-8; Transistor Polarity:N and Channel; Continuous Drain Current Id:6.4A; Source Voltage Vds:30V; On
Small Signal Field-Effect Transistor, 6.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N & P CH, 130V, 6.4A, SOIC-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Product Comparison

The three parts on the right have similar specifications to FDS8958B.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Number of Elements

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Termination

Dual Supply Voltage

Nominal Vgs

Contact Plating

Element Configuration

Turn On Delay Time

Drain to Source Voltage (Vdss)

Voltage - Rated DC

Current Rating

View Compare
FDS8958B

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

8

EAR99

26MOhm

Tin (Sn)

Other Transistors

900mW

DUAL

GULL WING

2

ENHANCEMENT MODE

1.6W

N and P-Channel

SWITCHING

26m Ω @ 6.4A, 10V

3V @ 250μA

540pF @ 15V

6.4A 4.5A

12nC @ 10V

6ns

N-CHANNEL AND P-CHANNEL

6 ns

17 ns

4.5A

2V

25V

6.4A

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.575mm

4.9mm

3.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FDS8858CZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

EAR99

17mOhm

Tin (Sn)

Other Transistors

900mW

DUAL

GULL WING

2

ENHANCEMENT MODE

2W

N and P-Channel

SWITCHING

17m Ω @ 8.6A, 10V

3V @ 250μA

1205pF @ 15V

8.6A 7.3A

24nC @ 10V

10ns

N-CHANNEL AND P-CHANNEL

16 ns

33 ns

8.6A

1.6V

25V

-

-60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

SMD/SMT

30V

1.6 V

-

-

-

-

-

-

FDS8958B vs FDS8858CZ
FDS8978

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

-

-

Active

1 (Unlimited)

-

-

18MOhm

-

-

1.6W

-

-

2

-

1.6W

2 N-Channel (Dual)

-

18m Ω @ 7.5A, 10V

2.5V @ 250μA

1270pF @ 15V

-

26nC @ 10V

37ns

-

37 ns

48 ns

7.5A

2.5V

20V

-

30V

-

Logic Level Gate

1.5mm

5mm

4mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

-

Tin

Dual

7 ns

30V

-

-

FDS8958B vs FDS8978
FDS8949

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

EAR99

29mOhm

-

FET General Purpose Power

2W

-

GULL WING

2

ENHANCEMENT MODE

2W

2 N-Channel (Dual)

-

29m Ω @ 6A, 10V

3V @ 250μA

955pF @ 20V

-

11nC @ 5V

5ns

-

3 ns

23 ns

6A

1.9V

20V

6A

40V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

SMD/SMT

40V

1.9 V

Tin

Dual

9 ns

-

40V

6A

FDS8958B vs FDS8949