FDS8934A

Fairchild/ON Semiconductor FDS8934A

Part Number:
FDS8934A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2477749-FDS8934A
Description:
MOSFET 2P-CH 20V 4A 8SOIC
ECAD Model:
Datasheet:
FDS8934A

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Specifications
Fairchild/ON Semiconductor FDS8934A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8934A.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    230.4mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1998
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation
    900mW
  • Current Rating
    -4A
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Power Dissipation
    2W
  • Turn On Delay Time
    8 ns
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    55m Ω @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1130pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    4A
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 5V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    260 ns
  • Continuous Drain Current (ID)
    -4A
  • Gate to Source Voltage (Vgs)
    -8V
  • Drain to Source Breakdown Voltage
    -20V
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
FDS8934A Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDS8934A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDS8934A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDS8934A More Descriptions
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 4A -4A 900mW 90ns
Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):0.055ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Product Comparison
The three parts on the right have similar specifications to FDS8934A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Termination
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Terminal Form
    Operating Mode
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    FET Technology
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Transistor Element Material
    ECCN Code
    Subcategory
    View Compare
  • FDS8934A
    FDS8934A
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    230.4mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    1998
    Obsolete
    1 (Unlimited)
    -20V
    900mW
    -4A
    2
    Dual
    2W
    8 ns
    2 P-Channel (Dual)
    55m Ω @ 4A, 4.5V
    1V @ 250μA
    1130pF @ 10V
    4A
    28nC @ 5V
    23ns
    20V
    90 ns
    260 ns
    -4A
    -8V
    -20V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS8958A
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    Tape & Reel (TR)
    2007
    Active
    1 (Unlimited)
    -
    2W
    7A
    2
    -
    2W
    -
    N and P-Channel
    28m Ω @ 7A, 10V
    3V @ 250μA
    575pF @ 15V
    7A 5A
    16nC @ 10V
    13ns
    -
    9 ns
    14 ns
    7A
    20V
    30V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 15 hours ago)
    18 Weeks
    Tin
    PowerTrench®
    e3
    yes
    8
    SMD/SMT
    28mOhm
    150°C
    -55°C
    DUAL
    GULL WING
    ENHANCEMENT MODE
    900mW
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    1.9V
    7A
    30V
    54 mJ
    METAL-OXIDE SEMICONDUCTOR
    1.9 V
    No SVHC
    No
    -
    -
    -
  • FDS8978
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    Active
    1 (Unlimited)
    -
    1.6W
    -
    2
    Dual
    1.6W
    7 ns
    2 N-Channel (Dual)
    18m Ω @ 7.5A, 10V
    2.5V @ 250μA
    1270pF @ 15V
    -
    26nC @ 10V
    37ns
    30V
    37 ns
    48 ns
    7.5A
    20V
    30V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    Tin
    PowerTrench®
    -
    -
    -
    -
    18MOhm
    -
    -
    -
    -
    -
    -
    -
    -
    2.5V
    -
    -
    -
    -
    -
    No SVHC
    -
    -
    -
    -
  • FDS8949
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    Active
    1 (Unlimited)
    40V
    2W
    6A
    2
    Dual
    2W
    9 ns
    2 N-Channel (Dual)
    29m Ω @ 6A, 10V
    3V @ 250μA
    955pF @ 20V
    -
    11nC @ 5V
    5ns
    -
    3 ns
    23 ns
    6A
    20V
    40V
    Logic Level Gate
    1.5mm
    5mm
    4mm
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 6 days ago)
    12 Weeks
    Tin
    PowerTrench®
    e3
    yes
    8
    SMD/SMT
    29mOhm
    -
    -
    -
    GULL WING
    ENHANCEMENT MODE
    -
    -
    -
    1.9V
    6A
    40V
    -
    METAL-OXIDE SEMICONDUCTOR
    1.9 V
    No SVHC
    No
    SILICON
    EAR99
    FET General Purpose Power
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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