Fairchild/ON Semiconductor FDS8934A
- Part Number:
- FDS8934A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477749-FDS8934A
- Description:
- MOSFET 2P-CH 20V 4A 8SOIC
- Datasheet:
- FDS8934A
Fairchild/ON Semiconductor FDS8934A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8934A.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight230.4mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-20V
- Max Power Dissipation900mW
- Current Rating-4A
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation2W
- Turn On Delay Time8 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs55m Ω @ 4A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1130pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4A
- Gate Charge (Qg) (Max) @ Vgs28nC @ 5V
- Rise Time23ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)90 ns
- Turn-Off Delay Time260 ns
- Continuous Drain Current (ID)-4A
- Gate to Source Voltage (Vgs)-8V
- Drain to Source Breakdown Voltage-20V
- FET FeatureLogic Level Gate
- Height1.5mm
- Length5mm
- Width4mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDS8934A Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDS8934A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDS8934A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDS8934A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDS8934A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDS8934A More Descriptions
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 4A -4A 900mW 90ns
Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):0.055ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):0.055ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
The three parts on the right have similar specifications to FDS8934A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureHeightLengthWidthRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingSeriesJESD-609 CodePbfree CodeNumber of TerminationsTerminationResistanceMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormOperating ModePower - MaxTransistor ApplicationPolarity/Channel TypeThreshold VoltageDrain Current-Max (Abs) (ID)Dual Supply VoltageAvalanche Energy Rating (Eas)FET TechnologyNominal VgsREACH SVHCRadiation HardeningTransistor Element MaterialECCN CodeSubcategoryView Compare
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FDS8934ASurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mg-55°C~150°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)-20V900mW-4A2Dual2W8 ns2 P-Channel (Dual)55m Ω @ 4A, 4.5V1V @ 250μA1130pF @ 10V4A28nC @ 5V23ns20V90 ns260 ns-4A-8V-20VLogic Level Gate1.5mm5mm4mmRoHS CompliantLead Free-----------------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--Tape & Reel (TR)2007Active1 (Unlimited)-2W7A2-2W-N and P-Channel28m Ω @ 7A, 10V3V @ 250μA575pF @ 15V7A 5A16nC @ 10V13ns-9 ns14 ns7A20V30VLogic Level Gate1.5mm5mm4mmROHS3 CompliantLead FreeACTIVE (Last Updated: 15 hours ago)18 WeeksTinPowerTrench®e3yes8SMD/SMT28mOhm150°C-55°CDUALGULL WINGENHANCEMENT MODE900mWSWITCHINGN-CHANNEL AND P-CHANNEL1.9V7A30V54 mJMETAL-OXIDE SEMICONDUCTOR1.9 VNo SVHCNo---
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)2001Active1 (Unlimited)-1.6W-2Dual1.6W7 ns2 N-Channel (Dual)18m Ω @ 7.5A, 10V2.5V @ 250μA1270pF @ 15V-26nC @ 10V37ns30V37 ns48 ns7.5A20V30VLogic Level Gate1.5mm5mm4mmROHS3 CompliantLead FreeACTIVE (Last Updated: 1 week ago)10 WeeksTinPowerTrench®----18MOhm--------2.5V-----No SVHC----
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)2006Active1 (Unlimited)40V2W6A2Dual2W9 ns2 N-Channel (Dual)29m Ω @ 6A, 10V3V @ 250μA955pF @ 20V-11nC @ 5V5ns-3 ns23 ns6A20V40VLogic Level Gate1.5mm5mm4mmROHS3 CompliantLead FreeACTIVE (Last Updated: 6 days ago)12 WeeksTinPowerTrench®e3yes8SMD/SMT29mOhm---GULL WINGENHANCEMENT MODE---1.9V6A40V-METAL-OXIDE SEMICONDUCTOR1.9 VNo SVHCNoSILICONEAR99FET General Purpose Power
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