Fairchild/ON Semiconductor FDS7066N7
- Part Number:
- FDS7066N7
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2488605-FDS7066N7
- Description:
- MOSFET N-CH 30V 23A 8-SOIC
- Datasheet:
- FDS7066N7
Fairchild/ON Semiconductor FDS7066N7 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS7066N7.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.5mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4973pF @ 15V
- Current - Continuous Drain (Id) @ 25°C23A Ta
- Gate Charge (Qg) (Max) @ Vgs69nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
FDS7066N7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4973pF @ 15V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDS7066N7 Features
a 30V drain to source voltage (Vdss)
FDS7066N7 Applications
There are a lot of ON Semiconductor
FDS7066N7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4973pF @ 15V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDS7066N7 Features
a 30V drain to source voltage (Vdss)
FDS7066N7 Applications
There are a lot of ON Semiconductor
FDS7066N7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
FDS7066N7 More Descriptions
MOSFET N-CH 30V 23A 8-SOIC
30V/16V, 4.5/5.5MO, NCH, SINGLE, SO8 FLMP, 400A GOX, PTII
MOSFETs 30V N-Ch PowerTrench
OEMs, CMs ONLY (NO BROKERS)
Contact for details
30V/16V, 4.5/5.5MO, NCH, SINGLE, SO8 FLMP, 400A GOX, PTII
MOSFETs 30V N-Ch PowerTrench
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to FDS7066N7.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialPbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusJESD-609 CodeAvalanche Energy Rating (Eas)View Compare
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FDS7066N7Surface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTape & Reel (TR)PowerTrench®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3W TaN-Channel4.5mOhm @ 23A, 10V3V @ 250μA4973pF @ 15V23A Ta69nC @ 5V30V4.5V 10V±16V--------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)3W TaN-Channel9m Ω @ 14A, 10V3V @ 250μA1.587pF @ 15V14A Ta22nC @ 5V30V4.5V 10V±20VYESSILICONyes8NOT SPECIFIEDDUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A0.009Ohm60A30VROHS3 Compliant--
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel7.5m Ω @ 13.5A, 10V2V @ 1mA2.8pF @ 15V13.5A Ta35nC @ 5V30V4.5V 10V±16VYESSILICONyes8MATTE TINDUALGULL WING260-NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-SWITCHING13.5A0.0075Ohm-30VROHS3 Compliante3-
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)3W TaN-Channel5m Ω @ 19A, 10V3V @ 250μA3.274pF @ 15V19A Ta56nC @ 5V30V4.5V 10V±20VYESSILICONyes8NICKEL PALLADIUM GOLDDUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING19A0.005Ohm60A30VROHS3 Compliante4360 mJ
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