Fairchild/ON Semiconductor FDS7064SN3
- Part Number:
- FDS7064SN3
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2488586-FDS7064SN3
- Description:
- MOSFET N-CH 30V 16A 8-SOIC
- ECAD Model:
-
- Datasheet:
- FDS7064SN3
Fairchild/ON Semiconductor FDS7064SN3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS7064SN3.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.13W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2800pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs35nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
FDS7064SN Description
The ON Semiconductor FDS7064SN3, 30V N-Channel PowerTrench SyncFET?, is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this FDS7064SN but also in the Control switch, (High side MOSFET).
FDS7064SN Features
High-performance trench technology for extremely low RDS(ON)
No inductance between MOSFET and Schottky
40% reduction in Body Diode Forward Voltage
Optimized to reduce losses in Synchronous Buck Regulators
16 A, 30 V RDS(ON) = 8.0 m? @ VGS = 10 V RDS(ON) = 9.5 m? @ VGS = 4.5 V
FDS7064SN Applications
Synchronous Rectifier
The ON Semiconductor FDS7064SN3, 30V N-Channel PowerTrench SyncFET?, is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this FDS7064SN but also in the Control switch, (High side MOSFET).
FDS7064SN Features
High-performance trench technology for extremely low RDS(ON)
No inductance between MOSFET and Schottky
40% reduction in Body Diode Forward Voltage
Optimized to reduce losses in Synchronous Buck Regulators
16 A, 30 V RDS(ON) = 8.0 m? @ VGS = 10 V RDS(ON) = 9.5 m? @ VGS = 4.5 V
FDS7064SN Applications
Synchronous Rectifier
FDS7064SN3 More Descriptions
Trans MOSFET N-CH 30V 16A 8-Pin FLMP SOIC T/R
MOSFET, N, FETKY, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissip
MOSFET, N, FETKY, SO-8; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:0.1R; Case style:SO-8 (SOIC-8); Current, Id max:29A; Current, Idm pulse:29A; Current, If av:2.8A; Marking, SMD:S7064; Power dissipation:2W; RoHS Compliant: Yes
MOSFET, N, FETKY, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissip
MOSFET, N, FETKY, SO-8; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:0.1R; Case style:SO-8 (SOIC-8); Current, Id max:29A; Current, Idm pulse:29A; Current, If av:2.8A; Marking, SMD:S7064; Power dissipation:2W; RoHS Compliant: Yes
The three parts on the right have similar specifications to FDS7064SN3.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusReach Compliance CodePulsed Drain Current-Max (IDM)Case ConnectionView Compare
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FDS7064SN3Surface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTape & Reel (TR)PowerTrench®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.13W TaN-Channel8mOhm @ 16A, 10V3V @ 1mA2800pF @ 15V16A Ta35nC @ 5V30V4.5V 10V±16V------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel5.5m Ω @ 15A, 10V3V @ 250μA3.514pF @ 15V15A Ta55nC @ 5V30V4.5V 10V±20VYESSILICONe3yes8MATTE TINDUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING15A0.0055Ohm30VROHS3 Compliant---
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)3W TaN-Channel4.8m Ω @ 19A, 10V3V @ 1mA2.46pF @ 15V19A Ta62nC @ 10V30V4.5V 10V±20VYESSILICONe4yes8NICKEL PALLADIUM GOLDDUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING19A0.0048Ohm30VROHS3 Compliantunknown60A-
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)3W TaN-Channel9m Ω @ 14A, 10V3V @ 250μA1.587pF @ 15V14A Ta22nC @ 5V30V4.5V 10V±20VYESSILICON-yes8NOT SPECIFIEDDUALGULL WINGNOT SPECIFIEDNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING14A0.009Ohm30VROHS3 Compliantunknown60ADRAIN
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