Fairchild/ON Semiconductor FDS7066ASN3
- Part Number:
- FDS7066ASN3
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2490028-FDS7066ASN3
- Description:
- MOSFET N-CH 30V 19A 8-SOIC
- Datasheet:
- FDS7066ASN3
Fairchild/ON Semiconductor FDS7066ASN3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS7066ASN3.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishNICKEL PALLADIUM GOLD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.8m Ω @ 19A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2.46pF @ 15V
- Current - Continuous Drain (Id) @ 25°C19A Ta
- Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)19A
- Drain-source On Resistance-Max0.0048Ohm
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDS7066ASN3 Overview
A device's maximum input capacitance is 2.46pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 19A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDS7066ASN3 Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7066ASN3 Applications
There are a lot of Rochester Electronics, LLC
FDS7066ASN3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2.46pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 19A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDS7066ASN3 Features
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
FDS7066ASN3 Applications
There are a lot of Rochester Electronics, LLC
FDS7066ASN3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDS7066ASN3 More Descriptions
Trans MOSFET N-CH 30V 19A 8-Pin FLMP SOIC T/R
30V, NCH,SO8 FLMP ,POWER TRENCH SYNCFET
MOSFETs 30V N-Channel PowerTrench
30V, NCH,SO8 FLMP ,POWER TRENCH SYNCFET
MOSFETs 30V N-Channel PowerTrench
The three parts on the right have similar specifications to FDS7066ASN3.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusSupplier Device PackagePublishedView Compare
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FDS7066ASN3Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesObsolete1 (Unlimited)8NICKEL PALLADIUM GOLDMOSFET (Metal Oxide)DUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE3W TaENHANCEMENT MODEN-ChannelSWITCHING4.8m Ω @ 19A, 10V3V @ 1mA2.46pF @ 15V19A Ta62nC @ 10V30V4.5V 10V±20V19A0.0048Ohm60A30VROHS3 Compliant---
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8MATTE TINMOSFET (Metal Oxide)DUALGULL WING260-NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODE-ENHANCEMENT MODEN-ChannelSWITCHING7.5m Ω @ 15A, 4.5V2V @ 250μA3.451pF @ 15V15A Ta40nC @ 4.5V30V--15A0.0075Ohm50A30VROHS3 Compliant--
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Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)PowerTrench®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------3W Ta-N-Channel-4.5mOhm @ 23A, 10V3V @ 250μA4973pF @ 15V23A Ta69nC @ 5V30V4.5V 10V±16V-----8-SO2004
-
Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)PowerTrench®--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------3.13W Ta-N-Channel-8mOhm @ 16A, 10V3V @ 1mA2800pF @ 15V16A Ta35nC @ 5V30V4.5V 10V±16V-----8-SO2004
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