Fairchild/ON Semiconductor FDP2532

Name: FDP2532
Brand: Fairchild/ON Semiconductor
SKU: 2480003-FDP2532
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP2532

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2480003-FDP2532

Description:: MOSFET N-CH 150V 79A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP2532 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP2532.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
16MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Current Rating
79A
Number of Elements
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs
107nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
79A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
150V
Avalanche Energy Rating (Eas)
400 mJ
Recovery Time
105 ns
Height
9.4mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP2532 Description
The FDP2532 is a PowerTrench? N-channel MOSFET suitable for synchronous rectification, battery protection circuit, uninterruptible power supplies and micro solar inverter. The general purpose MOSFET portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs as well as products for smaller power handling (single and dual N- and P-channel MOSFETs).

FDP2532 Features
RDS(on) = 14 mΩ ( Typ.) @VGS = 10 V, lD = 33 A
QG(tot) = 82 nC ( Typ.) @ VGS = 10 V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
ROHS3 Compliant
No SVHC
Lead Free

FDP2532 Applications
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Power Management

FDP2532 More Descriptions

Transistor, N-channel, PowerTrench MOSFET, 150V, 79A, 16mOhm, TO-220 | ON Semiconductor FDP2532
Transistor MOSFET N Channel 150 Volt 8 Amp 3-Pin 3 Tab TO-220AB Tube
N-Channel 150 V 16 mO Flange Mount PowerTrench Mosfet - TO-220AB
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
Trans MOSFET N-CH 150V 8A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:430A; SMD Marking:FDP2532; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to FDP2532.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDP2532

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

9 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

16MOhm

Tin (Sn)

FET General Purpose Power

150V

MOSFET (Metal Oxide)

79A

1

310W Tc

Single

ENHANCEMENT MODE

310W

DRAIN

16 ns

N-Channel

SWITCHING

16m Ω @ 33A, 10V

4V @ 250μA

5870pF @ 25V

8A Ta 79A Tc

107nC @ 10V

30ns

6V 10V

±20V

17 ns

39 ns

79A

4V

TO-220AB

20V

8A

150V

400 mJ

105 ns

9.4mm

10.67mm

4.83mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP2670

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

SILICON

-65°C~175°C TJ

Tube

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

93W Tc

-

ENHANCEMENT MODE

-

-

-

N-Channel

SWITCHING

130m Ω @ 10A, 10V

4.5V @ 250μA

1.32pF @ 100V

19A Ta

38nC @ 10V

-

10V

±20V

-

-

-

-

TO-220AB

-

19A

-

375 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

200V

0.13Ohm

40A

200V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP2532 vs FDP2670
FDP24N40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

6 Weeks

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET™

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

175MOhm

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

227W Tc

Single

ENHANCEMENT MODE

227W

-

40 ns

N-Channel

SWITCHING

175m Ω @ 12A, 10V

5V @ 250μA

3020pF @ 25V

24A Tc

60nC @ 10V

90ns

10V

±30V

65 ns

110 ns

24A

-

TO-220AB

30V

-

400V

-

-

15.38mm

10.1mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

-

-

-

96A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP2532 vs FDP24N40
FDP2710_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5V @ 250µA

±30V

MOSFET (Metal Oxide)

TO-220-3

Automotive, AEC-Q101, PowerTrench®

47 mOhm @ 50A, 10V

403W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

5690pF @ 25V

101nC @ 10V

N-Channel

-

10V

250V

4A (Ta)

FDP2532 vs FDP2710_F085