Fairchild/ON Semiconductor FDP2570

Name: FDP2570
Brand: Fairchild/ON Semiconductor
SKU: 2488656-FDP2570
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP2570

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488656-FDP2570

Description:: MOSFET N-CH 150V 22A TO-220AB

ECAD Model:

Datasheet:: FDB2570, FDP2570 TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP2570 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP2570.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
93W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
80mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1911pF @ 75V
Current - Continuous Drain (Id) @ 25°C
22A Ta
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V

Description

FDP2570 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1911pF @ 75V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (6V 10V) reduces this device's overall power consumption.

FDP2570 Features
a 150V drain to source voltage (Vdss)

FDP2570 Applications
There are a lot of ON Semiconductor
FDP2570 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

FDP2570 More Descriptions

MOSFET N-CH 150V 22A TO-220AB
Contact for details

Product Comparison

The three parts on the right have similar specifications to FDP2570.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Pulsed Drain Current-Max (IDM)

Drain-source On Resistance-Max

View Compare
FDP2570

Fairchild/ON Semiconductor

Through Hole

TO-220-3

TO-220-3

-65°C~175°C TJ

Tube

PowerTrench®

2001

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

93W Tc

N-Channel

80mOhm @ 11A, 10V

4V @ 250μA

1911pF @ 75V

22A Ta

56nC @ 10V

150V

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP26N40

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

UniFET™

2013

Active

1 (Unlimited)

MOSFET (Metal Oxide)

265W Tc

N-Channel

160m Ω @ 13A, 10V

5V @ 250μA

3185pF @ 25V

26A Tc

60nC @ 10V

-

10V

±30V

ACTIVE (Last Updated: 3 days ago)

5 Weeks

Tin

Through Hole

3

1.8g

SILICON

e3

yes

3

EAR99

160MOhm

AVALANCHE RATED

FET General Purpose Power

1

Single

ENHANCEMENT MODE

265W

45 ns

SWITCHING

100ns

66 ns

115 ns

26A

TO-220AB

30V

400V

15.38mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

FDP2570 vs FDP26N40
FDP24N40

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

UniFET™

2013

Active

1 (Unlimited)

MOSFET (Metal Oxide)

227W Tc

N-Channel

175m Ω @ 12A, 10V

5V @ 250μA

3020pF @ 25V

24A Tc

60nC @ 10V

-

10V

±30V

ACTIVE (Last Updated: 2 days ago)

6 Weeks

-

Through Hole

3

1.8g

SILICON

e3

yes

3

EAR99

175MOhm

-

FET General Purpose Power

1

Single

ENHANCEMENT MODE

227W

40 ns

SWITCHING

90ns

65 ns

110 ns

24A

TO-220AB

30V

400V

15.38mm

10.1mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

96A

-

FDP2570 vs FDP24N40
FDP20N50F

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

UniFET™

2004

Active

1 (Unlimited)

MOSFET (Metal Oxide)

250W Tc

N-Channel

260m Ω @ 10A, 10V

5V @ 250μA

3390pF @ 25V

20A Tc

65nC @ 10V

-

10V

±30V

ACTIVE (Last Updated: 2 days ago)

6 Weeks

-

Through Hole

3

1.8g

SILICON

e3

yes

3

EAR99

-

-

FET General Purpose Power

1

Single

ENHANCEMENT MODE

250W

45 ns

SWITCHING

120ns

60 ns

100 ns

20A

TO-220AB

30V

500V

-

-

-

No SVHC

-

ROHS3 Compliant

-

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

80A

0.26Ohm

FDP2570 vs FDP20N50F