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FDP2552

Fairchild/ON Semiconductor FDP2552

Part Number:
FDP2552
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849378-FDP2552
Description:
MOSFET N-CH 150V 37A TO-220AB
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor FDP2552 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP2552.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    9 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    1.8g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    PowerTrench®
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    32MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    37A
  • Number of Elements
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    36m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta 37A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    51nC @ 10V
  • Rise Time
    29ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    29 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    37A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    150V
  • Height
    9.4mm
  • Length
    10.67mm
  • Width
    4.83mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDP2552    Description
FDP2552 is a Channel PowerTrench? MOSFET 150 V, 37 A, 36 mΩ.    FDP2552     Features   RDS(on) = 32m? (Typ.) @ VGS = 10V, ID = 16A QG(tot) = 39nC (Typ.) @ VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
FDP2552      Applications
AC-DC Merchant Power Supply - Desktop PC Other Data Processing Uninterruptible Power Supply DC/DC Converter Distributed Power Architectures and VRM Primary Switch for 24V ad 48V Systems High Voltage Synchronous Rectifier
FDP2552 More Descriptions
Transistor MOSFET N Channel 150 Volt 5 Amp 3-Pin 3 Tab TO-220AB Tube
Transistor, N-channel, PowerTrench MOSFET, 150V, 37A, 36mOhm, TO-220AB | ON Semiconductor FDP2552
N-Channel 150 V 36 mOhm PowerTrench® Mosfet - TO-220AB
TO-220AB, SINGLE, N-CH, 150V, 36MOHM ULTRAFET TRENCH MOSFET
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
Trans MOSFET N-CH 150V 5A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Drain Source Voltage Vds:150V; Continuous Drain Current Id:5A; Operating Temperature Max:175°C; Product Range:-; Qualification:-; Msl:- Rohs Compliant: Yes |Onsemi FDP2552.
Product Comparison
The three parts on the right have similar specifications to FDP2552.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    Nominal Vgs
    REACH SVHC
    Surface Mount
    Terminal Position
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Additional Feature
    View Compare
  • FDP2552
    FDP2552
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    9 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~175°C TJ
    Tube
    PowerTrench®
    2002
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    32MOhm
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    37A
    1
    150W Tc
    Single
    ENHANCEMENT MODE
    150W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    36m Ω @ 16A, 10V
    4V @ 250μA
    2800pF @ 25V
    5A Ta 37A Tc
    51nC @ 10V
    29ns
    6V 10V
    ±20V
    29 ns
    36 ns
    37A
    TO-220AB
    20V
    5A
    150V
    9.4mm
    10.67mm
    4.83mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDP2614
    FDP2614
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~150°C TJ
    Tube
    PowerTrench®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    1
    260W Tc
    Single
    ENHANCEMENT MODE
    260W
    -
    77 ns
    N-Channel
    SWITCHING
    27m Ω @ 31A, 10V
    5V @ 250μA
    7230pF @ 25V
    62A Tc
    99nC @ 10V
    284ns
    10V
    ±30V
    162 ns
    103 ns
    62A
    TO-220AB
    30V
    -
    200V
    16.51mm
    10.67mm
    4.83mm
    -
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    0.027Ohm
    4 V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDP2552 vs FDP2614
  • FDP2670
    FDP2670
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -65°C~175°C TJ
    Tube
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    93W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    130m Ω @ 10A, 10V
    4.5V @ 250μA
    1.32pF @ 100V
    19A Ta
    38nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    19A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    MATTE TIN
    NOT APPLICABLE
    NOT APPLICABLE
    COMMERCIAL
    0.13Ohm
    -
    -
    NO
    SINGLE
    unknown
    3
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    200V
    40A
    200V
    375 mJ
    -
    FDP2552 vs FDP2670
  • FDP26N40
    FDP26N40
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    5 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    1.8g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    160MOhm
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    1
    265W Tc
    Single
    ENHANCEMENT MODE
    265W
    -
    45 ns
    N-Channel
    SWITCHING
    160m Ω @ 13A, 10V
    5V @ 250μA
    3185pF @ 25V
    26A Tc
    60nC @ 10V
    100ns
    10V
    ±30V
    66 ns
    115 ns
    26A
    TO-220AB
    30V
    -
    400V
    15.38mm
    10.1mm
    4.7mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    AVALANCHE RATED
    FDP2552 vs FDP26N40
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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