Fairchild/ON Semiconductor FDP10AN06A0

Name: FDP10AN06A0
Brand: Fairchild/ON Semiconductor
SKU: 2488791-FDP10AN06A0
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP10AN06A0

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488791-FDP10AN06A0

Description:: MOSFET N-CH 60V 75A TO-220AB

ECAD Model:

Datasheet:: FDB10AN06A0, FDP10AN06A0 TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP10AN06A0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP10AN06A0.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
135W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.84pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
12A
Drain-source On Resistance-Max
0.0105Ohm
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
429 mJ
RoHS Status
ROHS3 Compliant

Description

FDP10AN06A0 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 429 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.84pF @ 25V.12A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (6V 10V) reduces this device's overall power consumption.

FDP10AN06A0 Features
the avalanche energy rating (Eas) is 429 mJ
a 60V drain to source voltage (Vdss)

FDP10AN06A0 Applications
There are a lot of Rochester Electronics, LLC
FDP10AN06A0 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

FDP10AN06A0 More Descriptions

TO-220AB, SINGLE, N-CH, 60V, 0.0105 OHM ULTRAFET TRENCH MOS
MOSFET N-CH 60V 12A/75A TO220-3
MOSFETs 60V, 75a 0.0105Ohms/VGS=10V

Product Comparison

The three parts on the right have similar specifications to FDP10AN06A0.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

ECCN Code

Subcategory

Continuous Drain Current (ID)

Lifecycle Status

Factory Lead Time

Number of Pins

Weight

Published

Resistance

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Lead Free

Supplier Device Package

View Compare
FDP10AN06A0

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

135W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10.5m Ω @ 75A, 10V

4V @ 250μA

1.84pF @ 25V

12A Ta 75A Tc

37nC @ 10V

60V

6V 10V

±20V

TO-220AB

12A

0.0105Ohm

60V

429 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP150N10A

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

PowerTrench®

-

yes

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

Single

91W Tc

-

-

N-Channel

-

15m Ω @ 50A, 10V

4V @ 250μA

1440pF @ 50V

50A Tc

21nC @ 10V

100V

10V

±20V

-

-

-

-

-

RoHS Compliant

Through Hole

EAR99

FET General Purpose Power

50A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP10AN06A0 vs FDP150N10A
FDP100N10

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

PowerTrench®

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

1

-

208W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 75A, 10V

4.5V @ 250μA

7300pF @ 25V

75A Tc

100nC @ 10V

-

10V

±20V

TO-220AB

-

-

-

-

ROHS3 Compliant

Through Hole

EAR99

FET General Purpose Power

75A

ACTIVE (Last Updated: 2 days ago)

9 Weeks

3

1.8g

2013

10MOhm

Single

208W

70 ns

265ns

115 ns

125 ns

2.5V

20V

100V

16.51mm

10.67mm

4.83mm

No SVHC

Lead Free

-

FDP10AN06A0 vs FDP100N10
FDP16N50

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

UniFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

200W Tc

-

-

N-Channel

-

380mOhm @ 8A, 10V

5V @ 250μA

1.945pF @ 25V

16A Tc

45nC @ 10V

500V

10V

±30V

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

FDP10AN06A0 vs FDP16N50