Fairchild/ON Semiconductor FDP100N10
- Part Number:
- FDP100N10
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2850864-FDP100N10
- Description:
- MOSFET N-CH 100V 75A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FDP100N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP100N10.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time9 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance10MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max208W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation208W
- Case ConnectionDRAIN
- Turn On Delay Time70 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Rise Time265ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)115 ns
- Turn-Off Delay Time125 ns
- Continuous Drain Current (ID)75A
- Threshold Voltage2.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Height16.51mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDP100N10 Description
The FDP100N10 N-Channel MOSFET is produced using a PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDP100N10 Features
RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A
Fast switching speed
Low Gate Charge
High-performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
FDP100N10 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing
The FDP100N10 N-Channel MOSFET is produced using a PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDP100N10 Features
RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A
Fast switching speed
Low Gate Charge
High-performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
FDP100N10 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing
FDP100N10 More Descriptions
FDP100N10 Series 100 V 10 mOhm N-Channel PowerTrench Mosfet TO-220AB
N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ
Trans MOSFET N-CH 100V 75A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET,N CH,100V,75A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ
Trans MOSFET N-CH 100V 75A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET,N CH,100V,75A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The three parts on the right have similar specifications to FDP100N10.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountTerminal PositionReach Compliance CodePin CountJESD-30 CodeConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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FDP100N10ACTIVE (Last Updated: 2 days ago)9 WeeksThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~175°C TJTubePowerTrench®2013e3yesActive1 (Unlimited)3EAR9910MOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDNot Qualified1208W TcSingleENHANCEMENT MODE208WDRAIN70 nsN-ChannelSWITCHING10m Ω @ 75A, 10V4.5V @ 250μA7300pF @ 25V75A Tc100nC @ 10V265ns10V±20V115 ns125 ns75A2.5VTO-220AB20V100V16.51mm10.67mm4.83mmNo SVHCROHS3 CompliantLead Free------------- -
---Through HoleTO-220-3----55°C~175°C TJTubePowerTrench®---Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----115W Tc-----N-Channel-13.5mOhm @ 62A, 10V4V @ 250μA1.35pF @ 25V10.9A Ta 62A Tc29nC @ 10V-6V 10V±20V-----------ROHS3 Compliant-TO-220-360V----------
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---Through HoleTO-220-3----55°C~175°C TJTube----Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----300W Tc-----N-Channel-380mOhm @ 7.5A, 10V4V @ 250μA1.85pF @ 25V15A Tc41nC @ 10V-10V±30V-----------ROHS3 Compliant-TO-220-3500V----------
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---Through HoleTO-220-3--SILICON-55°C~175°C TJTubePowerTrench®-e3yesObsolete1 (Unlimited)3--MATTE TIN-MOSFET (Metal Oxide)NOT APPLICABLENOT APPLICABLECOMMERCIAL1135W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING10.5m Ω @ 75A, 10V4V @ 250μA1.84pF @ 25V12A Ta 75A Tc37nC @ 10V-6V 10V±20V----TO-220AB------ROHS3 Compliant--60VNOSINGLEunknown3R-PSFM-T3SINGLE WITH BUILT-IN DIODE12A0.0105Ohm60V429 mJ
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