Fairchild/ON Semiconductor FDN360P

Name: FDN360P
Brand: Fairchild/ON Semiconductor
SKU: 2484593-FDN360P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDN360P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484593-FDN360P

Description:: MOSFET P-CH 30V 2A SSOT3

ECAD Model:

Datasheet:: FDN360P

Specifications

Fairchild/ON Semiconductor FDN360P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN360P.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
80MOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-2A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
6 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
298pF @ 15V
Current - Continuous Drain (Id) @ 25°C
2A Ta
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
2A
Threshold Voltage
20V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2A
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
Max Junction Temperature (Tj)
150°C
Height
1.22mm
Length
2.92mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDN360P Description The FDN360P is a super SOT-23 surface mount single P channel PowerTrench MOSFET. For enhanced switching performance, the PowerTrench method has been optimized to minimize on-state resistance and preserve low gate charges. This gadget is ideal for battery-powered and low-voltage applications.
FDN360P Features -2 A, -30 V
RDS(on) = 80 mΩ @ VGS = -10 V
RDS(on) = 125 mΩ @ VGS = -4.5 V
Low Gate Charge (6.2nC typical)
High Performance Trench Technology for Extremely Low rDS(on)
High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability
FDN360P Applications Battery Powered Circuits
DC/DC Converter
Load Switch
Motor Drivers

FDN360P More Descriptions

Transistor: P-MOSFET; unipolar; -30V; -2A; 0.08ohm; 0.5W; -55 150 deg.C; SMD; SOT23
Transistor MOSFET P Channel 30 Volt 2 Amp 3 Pin Supersot Tape and Reel
Trans MOSFET P-CH 30V 2A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled
FSC FDN360P TRANS MOSFET P-CH 30V 2A 3-PIN SUPERSO T FETMOSFET SOT23
MOSFET Operating temperature: -55...150 °C Marking: 360 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Product Comparison

The three parts on the right have similar specifications to FDN360P.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Termination

Terminal Finish

Nominal Vgs

Min Breakdown Voltage

Continuous Drain Current (Id) @ 25°C

View Compare
FDN360P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

80MOhm

LOGIC LEVEL COMPATIBLE

Other Transistors

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-2A

1

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

6 ns

P-Channel

SWITCHING

80m Ω @ 2A, 10V

3V @ 250μA

298pF @ 15V

2A Ta

9nC @ 10V

13ns

30V

4.5V 10V

±20V

6 ns

11 ns

2A

20V

20V

2A

-30V

-30V

150°C

1.22mm

2.92mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
FDN357N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

1998

e3

yes

Active

1 (Unlimited)

3

EAR99

60MOhm

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

1.9A

1

-

500mW Ta

Single

ENHANCEMENT MODE

500mW

5 ns

N-Channel

SWITCHING

60m Ω @ 2.2A, 10V

2V @ 250μA

235pF @ 10V

1.9A Ta

5.9nC @ 5V

12ns

-

4.5V 10V

±20V

12 ns

12 ns

1.9A

1.6V

20V

-

30V

30V

-

940μm

2.92mm

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

SMD/SMT

Tin (Sn)

1.6 V

30V

-

FDN360P vs FDN357N
FDN338P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e3

yes

Active

1 (Unlimited)

3

EAR99

115mOhm

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-1.6A

1

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

10 ns

P-Channel

SWITCHING

115m Ω @ 1.6A, 4.5V

1.5V @ 250μA

451pF @ 10V

1.6A Ta

6.2nC @ 4.5V

11ns

20V

2.5V 4.5V

±8V

11 ns

16 ns

1.6A

-800mV

8V

-

-20V

-

150°C

1.22mm

-

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-800 mV

-

-

FDN360P vs FDN338P
FDN337N

Fairchild/ON Semiconductor

-

-

-

-

-

SOT-23

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

80mΩ @ 3.6A,4.5V

1.3V @ 250uA

-

-

-

-

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

3A

FDN360P vs FDN337N