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FDN335N

Fairchild/ON Semiconductor FDN335N

Part Number:
FDN335N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2477984-FDN335N
Description:
MOSFET N-CH 20V 1.7A SSOT3
ECAD Model:
Datasheet:
UMW FDN335N

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Specifications
Fairchild/ON Semiconductor FDN335N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN335N.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    CASE 527AG-01
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    70MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    1.7A
  • Number of Elements
    1
  • Voltage
    20V
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Current
    17A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    70m Ω @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    310pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 4.5V
  • Rise Time
    8.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    8.5 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    1.7A
  • Threshold Voltage
    900mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • Dual Supply Voltage
    25V
  • Nominal Vgs
    800 mV
  • Height
    940μm
  • Length
    2.92mm
  • Width
    3.05mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDN335N Description
The ONSEMI FDN335N is a 2.5V N-channel MOSFET that employs the innovative PowerTrench? technology, which has been specifically optimised to minimise on-state resistance while maintaining a low gate charge for excellent switching performance.

FDN335N Features
1.7 A, 20 V
RDS(on) = 0.07 |@ VGS = 4.5 V
RDS(on) = 0.100 | @ VGS = 2.5 V
Low gate charge (3.5nC typical).
High-performance trench technology for highly low RDS(ON)
High power and current handling capability

FDN335N Applications
This product is general usage and suitable for many different applications.
DC/DC converter
Load Switch
 
FDN335N More Descriptions
N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ
N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3
ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount
MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Powe
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDN335N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Additional Feature
    View Compare
  • FDN335N
    FDN335N
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    CASE 527AG-01
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    1999
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    70MOhm
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1.7A
    1
    20V
    500mW Ta
    Single
    17A
    ENHANCEMENT MODE
    500mW
    5 ns
    N-Channel
    SWITCHING
    70m Ω @ 1.7A, 4.5V
    1.5V @ 250μA
    310pF @ 10V
    1.7A Ta
    5nC @ 4.5V
    8.5ns
    2.5V 4.5V
    ±8V
    8.5 ns
    11 ns
    1.7A
    900mV
    8V
    20V
    25V
    800 mV
    940μm
    2.92mm
    3.05mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDN336P
    FDN336P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    200mOhm
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.3A
    1
    -
    500mW Ta
    Single
    -
    ENHANCEMENT MODE
    500mW
    7 ns
    P-Channel
    SWITCHING
    200m Ω @ 1.3A, 4.5V
    1.5V @ 250μA
    330pF @ 10V
    1.3A Ta
    5nC @ 4.5V
    12ns
    2.5V 4.5V
    ±8V
    12 ns
    16 ns
    1.2A
    -900mV
    8V
    -20V
    -20V
    -900 mV
    940μm
    2.92mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    30mg
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDN335N vs FDN336P
  • FDN372S
    FDN372S
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    -
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    500mW Ta
    -
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    40m Ω @ 2.6A, 10V
    3V @ 1mA
    630pF @ 15V
    2.6A Ta
    8.1nC @ 5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    30V
    YES
    NOT SPECIFIED
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PDSO-G3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    2.6A
    0.04Ohm
    30V
    -
    FDN335N vs FDN372S
  • FDN361BN
    FDN361BN
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 7 hours ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    500mW Ta
    Single
    -
    ENHANCEMENT MODE
    500mW
    3 ns
    N-Channel
    SWITCHING
    110m Ω @ 1.4A, 10V
    3V @ 250μA
    193pF @ 15V
    1.4A Ta
    1.8nC @ 4.5V
    8ns
    4.5V 10V
    ±20V
    8 ns
    16 ns
    1.4A
    2.1V
    20V
    30V
    -
    -
    940μm
    1.4mm
    2.92mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    30mg
    -
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    Not Qualified
    -
    -
    -
    -
    FAST SWITCHING
    FDN335N vs FDN361BN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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