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FDG312P

Fairchild/ON Semiconductor FDG312P

Part Number:
FDG312P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479733-FDG312P
Description:
MOSFET P-CH 20V 1.2A SC70-6
ECAD Model:
Datasheet:
FDG312P

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Specifications
Fairchild/ON Semiconductor FDG312P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG312P.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    28mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    180mOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -1.2A
  • Number of Elements
    1
  • Power Dissipation-Max
    750mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    750mW
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 4.5V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    1.2A
  • Threshold Voltage
    900mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Height
    1mm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDG312P Description
This P-Channel MOSFET is made with ON Semiconductor's innovative PowerTrench process, which is specifically designed to reduce on-state resistance while maintaining low gate charge for enhanced switching performance. These devices are well-suited for use in portable electronics.

FDG312P Features
Low gate charge (3.3 nC typical).
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC70-6 surface mount package.

FDG312P Applications
Load switch
Battery protection
Power management
FDG312P More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Product Comparison
The three parts on the right have similar specifications to FDG312P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Nominal Vgs
    Min Breakdown Voltage
    Termination
    Dual Supply Voltage
    View Compare
  • FDG312P
    FDG312P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    1999
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    180mOhm
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -1.2A
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    7 ns
    P-Channel
    SWITCHING
    180m Ω @ 1.2A, 4.5V
    1.5V @ 250μA
    330pF @ 10V
    1.2A Ta
    5nC @ 4.5V
    12ns
    20V
    2.5V 4.5V
    ±8V
    12 ns
    16 ns
    1.2A
    900mV
    8V
    -20V
    1mm
    2mm
    1.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDG329N
    FDG329N
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    420mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    90m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    324pF @ 10V
    1.5A Ta
    4.6nC @ 4.5V
    -
    20V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    MATTE TIN
    260
    unknown
    NOT SPECIFIED
    6
    R-PDSO-G6
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    1.5A
    0.09Ohm
    20V
    -
    -
    -
    -
    FDG312P vs FDG329N
  • FDG327N
    FDG327N
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    90mOhm
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1.5A
    1
    420mW Ta
    Single
    ENHANCEMENT MODE
    420mW
    6 ns
    N-Channel
    SWITCHING
    90m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    423pF @ 10V
    1.5A Ta
    6.3nC @ 4.5V
    6.5ns
    -
    1.8V 4.5V
    ±8V
    6.5 ns
    14 ns
    1.5A
    700mV
    8V
    20V
    1mm
    2mm
    1.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    260
    -
    30
    -
    -
    -
    -
    -
    -
    -
    700 mV
    20V
    -
    -
    FDG312P vs FDG327N
  • FDG315N
    FDG315N
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    -
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2000
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    120MOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    2A
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    3 ns
    N-Channel
    SWITCHING
    120m Ω @ 2A, 10V
    3V @ 250μA
    220pF @ 15V
    2A Ta
    4nC @ 5V
    11ns
    -
    4.5V 10V
    ±20V
    11 ns
    7 ns
    2A
    1.8V
    20V
    30V
    1mm
    2mm
    1.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    2A
    -
    -
    1.8 V
    -
    SMD/SMT
    30V
    FDG312P vs FDG315N
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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