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FDD8896

Fairchild/ON Semiconductor FDD8896

Part Number:
FDD8896
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478804-FDD8896
Description:
MOSFET N-CH 30V 94A DPAK
ECAD Model:
Datasheet:
FDD8896, FDU8896

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Specifications
Fairchild/ON Semiconductor FDD8896 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8896.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    5.7MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    94A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    80W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    80W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.7m Ω @ 35A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2525pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    17A Ta 94A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    106ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    41 ns
  • Turn-Off Delay Time
    53 ns
  • Continuous Drain Current (ID)
    94A
  • Threshold Voltage
    2.5V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDD8896 Description

The FDD8896 MOSFET is an N-channel MOSFET manufactured with the PowerTrench? technology. The FDD8896 was created to improve the overall efficiency of DC-to-DC converters that use either synchronous or traditional switching PWM controllers. According to the FDD8896 datasheet, it has been tuned for low gate charge, low RDS (ON), and quick switching speed.

FDD8896 Features

? Low gate charge
? rDS(ON) = 5.7m?, VGS = 10V, ID = 35A
? rDS(ON) = 6.8m?, VGS = 4.5V, ID = 35A
? High power and current handling capability
? High performance trench technology for extremely lowrDS(ON)

FDD8896 Applications

? OR-ing
? Server
? power
? DC/DC converters
? Vehicle electronics
FDD8896 More Descriptions
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Product Comparison
The three parts on the right have similar specifications to FDD8896.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Additional Feature
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    View Compare
  • FDD8896
    FDD8896
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    5.7MOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    GULL WING
    94A
    R-PSSO-G2
    1
    80W Tc
    Single
    ENHANCEMENT MODE
    80W
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    5.7m Ω @ 35A, 10V
    2.5V @ 250μA
    2525pF @ 15V
    17A Ta 94A Tc
    60nC @ 10V
    106ns
    4.5V 10V
    ±20V
    41 ns
    53 ns
    94A
    2.5V
    TO-252AA
    20V
    30V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD8780
    FDD8780
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    8.5MOhm
    FET General Purpose Power
    25V
    MOSFET (Metal Oxide)
    GULL WING
    35A
    R-PSSO-G2
    1
    50W Tc
    Single
    ENHANCEMENT MODE
    50W
    DRAIN
    7 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 35A, 10V
    2.5V @ 250μA
    1440pF @ 13V
    35A Tc
    29nC @ 10V
    9ns
    4.5V 10V
    ±20V
    24 ns
    43 ns
    35A
    1.8V
    TO-252AA
    20V
    25V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    AVALANCHE RATED
    60A
    224A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDD8896 vs FDD8780
  • FDD8750
    FDD8750
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    3.7W Ta 18W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    -
    40m Ω @ 2.7A, 10V
    2.5V @ 250μA
    425pF @ 13V
    6.5A Ta 2.7A Tc
    9nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    MATTE TIN
    AVALANCHE RATED
    6.5A
    14A
    YES
    SINGLE
    260
    unknown
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    25V
    63Ohm
    25V
    19 mJ
    -
    FDD8896 vs FDD8750
  • FDD86102LZ
    FDD86102LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    3.1W Ta 54W Tc
    Single
    ENHANCEMENT MODE
    54W
    DRAIN
    6.6 ns
    N-Channel
    SWITCHING
    22.5m Ω @ 8A, 10V
    3V @ 250μA
    1540pF @ 50V
    8A Ta 35A Tc
    26nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    2.3 ns
    20 ns
    8A
    1.5V
    -
    20V
    100V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    -
    Tin (Sn)
    -
    8A
    40A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    0.0225Ohm
    -
    84 mJ
    1.5 V
    FDD8896 vs FDD86102LZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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