Fairchild/ON Semiconductor FDD2572
- Part Number:
- FDD2572
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481938-FDD2572
- Description:
- MOSFET N-CH 150V 29A D-PAK
- Datasheet:
- FDD2572, FDU2572
Fairchild/ON Semiconductor FDD2572 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD2572.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance54MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating29A
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max135W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation135W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs54m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1770pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4A Ta 29A Tc
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)29A
- Threshold Voltage4V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage150V
- Dual Supply Voltage150V
- Nominal Vgs4 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDD2572 Description
The FDD2572 is an N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. It is suitable for use in high voltage synchronous rectification DC-to-DC converters and off-line UPS applications.
FDD2572 Features
UIS Capability (single pulse and repetitive pulse)
Low miller charge
Low Qrr body diode
FDD2572 Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
The FDD2572 is an N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. It is suitable for use in high voltage synchronous rectification DC-to-DC converters and off-line UPS applications.
FDD2572 Features
UIS Capability (single pulse and repetitive pulse)
Low miller charge
Low Qrr body diode
FDD2572 Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDD2572 More Descriptions
N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ
N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to FDD2572.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Reach Compliance CodePulsed Drain Current-Max (IDM)Vgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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FDD2572ACTIVE (Last Updated: 6 days ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2SMD/SMTEAR9954MOhmTin (Sn)FET General Purpose Power150VMOSFET (Metal Oxide)GULL WING29AR-PSSO-G21135W TcSingleENHANCEMENT MODE135WDRAIN11 nsN-ChannelSWITCHING54m Ω @ 9A, 10V4V @ 250μA1770pF @ 25V4A Ta 29A Tc34nC @ 10V14ns6V 10V±20V14 ns31 ns29A4VTO-252AA20V4A150V150V4 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free--------------------------------
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)2---MATTE TIN--MOSFET (Metal Oxide)GULL WING-R-PSSO-G2190W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING20m Ω @ 45A, 10V4V @ 250μA950pF @ 25V8A Ta 45A Tc19nC @ 10V-10V±20V----TO-252AA-8A--------ROHS3 Compliant-YESSINGLE260NOT SPECIFIED4COMMERCIALSINGLE WITH BUILT-IN DIODE60V0.02Ohm60V50 mJ--------------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)2---MATTE TIN--MOSFET (Metal Oxide)GULL WING-R-PSSO-G2142W Ta-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING720m Ω @ 1.5A, 10V4.5V @ 250μA234pF @ 100V4.9A Ta11nC @ 10V-10V±20V------4.9A--------ROHS3 Compliant-YESSINGLE260NOT SPECIFIED3COMMERCIALSINGLE WITH BUILT-IN DIODE200V0.72Ohm200V90 mJunknown10A------------------
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-------------------------------------------------------------------------4V @ 250µA±20VMOSFET (Metal Oxide)TO-252AAAutomotive, AEC-Q101, PowerTrench®20 mOhm @ 45A, 10V90W (Tc)Tape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63-55°C ~ 175°C (TJ)Surface Mount950pF @ 25V19nC @ 10VN-Channel-10V60V8A (Ta), 45A (Tc)
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