FDD2572

Fairchild/ON Semiconductor FDD2572

Part Number:
FDD2572
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481938-FDD2572
Description:
MOSFET N-CH 150V 29A D-PAK
ECAD Model:
Datasheet:
FDD2572, FDU2572

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Comments
Specifications
Fairchild/ON Semiconductor FDD2572 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD2572.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    54MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    29A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    135W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    135W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    54m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1770pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4A Ta 29A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    34nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    31 ns
  • Continuous Drain Current (ID)
    29A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    150V
  • Dual Supply Voltage
    150V
  • Nominal Vgs
    4 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDD2572 Description 
The FDD2572 is an N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. It is suitable for use in high voltage synchronous rectification DC-to-DC converters and off-line UPS applications.

FDD2572 Features
UIS Capability (single pulse and repetitive pulse)
Low miller charge
Low Qrr body diode

FDD2572 Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDD2572 More Descriptions
N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ
N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to FDD2572.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Reach Compliance Code
    Pulsed Drain Current-Max (IDM)
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • FDD2572
    FDD2572
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    54MOhm
    Tin (Sn)
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    29A
    R-PSSO-G2
    1
    135W Tc
    Single
    ENHANCEMENT MODE
    135W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    54m Ω @ 9A, 10V
    4V @ 250μA
    1770pF @ 25V
    4A Ta 29A Tc
    34nC @ 10V
    14ns
    6V 10V
    ±20V
    14 ns
    31 ns
    29A
    4V
    TO-252AA
    20V
    4A
    150V
    150V
    4 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD20AN06A0
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    90W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    20m Ω @ 45A, 10V
    4V @ 250μA
    950pF @ 25V
    8A Ta 45A Tc
    19nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-252AA
    -
    8A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SINGLE
    260
    NOT SPECIFIED
    4
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    0.02Ohm
    60V
    50 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD2612
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    42W Ta
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    720m Ω @ 1.5A, 10V
    4.5V @ 250μA
    234pF @ 100V
    4.9A Ta
    11nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    4.9A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SINGLE
    260
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    200V
    0.72Ohm
    200V
    90 mJ
    unknown
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD20AN06A0_F085
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-252AA
    Automotive, AEC-Q101, PowerTrench®
    20 mOhm @ 45A, 10V
    90W (Tc)
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C ~ 175°C (TJ)
    Surface Mount
    950pF @ 25V
    19nC @ 10V
    N-Channel
    -
    10V
    60V
    8A (Ta), 45A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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