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FDD2582

Fairchild/ON Semiconductor FDD2582

Part Number:
FDD2582
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483894-FDD2582
Description:
MOSFET N-CH 150V 21A DPAK
ECAD Model:
Datasheet:
FDD2582

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Specifications
Fairchild/ON Semiconductor FDD2582 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD2582.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    66mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    21A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    95W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    95W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    66m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1295pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.7A Ta 21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Rise Time
    19ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    21A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Avalanche Energy Rating (Eas)
    59 mJ
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDD2582    Description   FDD2582 is a N-Channel PowerTrench? MOSFET 150V, 21A, 66mΩ.This product is designed for general usage and suitable for many different applications.   FDD2582    Features   rDS(ON) = 58mΩ(Typ.), VGS = 10V, ID = 7A Qg(tot) = 19nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
FDD2582     Applications This product is general usage and suitable for many different applications.  




FDD2582 More Descriptions
Transistor, N-channel, PowerTrench MOSFET, 150V, 21A, 66 mOhm, 95W | ON Semiconductor FDD2582
N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ
N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA
MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to FDD2582.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Reach Compliance Code
    Pulsed Drain Current-Max (IDM)
    Termination
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • FDD2582
    FDD2582
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    66mOhm
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    21A
    R-PSSO-G2
    1
    95W Tc
    Single
    ENHANCEMENT MODE
    95W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    66m Ω @ 7A, 10V
    4V @ 250μA
    1295pF @ 25V
    3.7A Ta 21A Tc
    25nC @ 10V
    19ns
    6V 10V
    ±20V
    19 ns
    32 ns
    21A
    4V
    TO-252AA
    20V
    150V
    59 mJ
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD20AN06A0
    FDD20AN06A0
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    90W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    20m Ω @ 45A, 10V
    4V @ 250μA
    950pF @ 25V
    8A Ta 45A Tc
    19nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-252AA
    -
    -
    50 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    MATTE TIN
    SINGLE
    260
    NOT SPECIFIED
    4
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    8A
    0.02Ohm
    60V
    -
    -
    -
    -
    -
    FDD2582 vs FDD20AN06A0
  • FDD2612
    FDD2612
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    42W Ta
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    720m Ω @ 1.5A, 10V
    4.5V @ 250μA
    234pF @ 100V
    4.9A Ta
    11nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    90 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    MATTE TIN
    SINGLE
    260
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    200V
    4.9A
    0.72Ohm
    200V
    unknown
    10A
    -
    -
    -
    FDD2582 vs FDD2612
  • FDD2670
    FDD2670
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    4 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    2
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    GULL WING
    3.6A
    -
    1
    3.2W Ta 70W Tc
    Single
    ENHANCEMENT MODE
    70mW
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    130m Ω @ 3.6A, 10V
    4.5V @ 250μA
    1228pF @ 100V
    3.6A Ta
    43nC @ 10V
    8ns
    10V
    ±20V
    25 ns
    30 ns
    3.6A
    4V
    -
    20V
    200V
    375 mJ
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SMD/SMT
    200V
    4 V
    FDD2582 vs FDD2670
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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