Fairchild/ON Semiconductor FDD2670
- Part Number:
- FDD2670
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2486597-FDD2670
- Description:
- MOSFET N-CH 200V 3.6A D-PAK
- ECAD Model:
-
- Datasheet:
- FDD2670
Fairchild/ON Semiconductor FDD2670 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD2670.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins2
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating3.6A
- Number of Elements1
- Power Dissipation-Max3.2W Ta 70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70mW
- Case ConnectionDRAIN
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs130m Ω @ 3.6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1228pF @ 100V
- Current - Continuous Drain (Id) @ 25°C3.6A Ta
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)3.6A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Dual Supply Voltage200V
- Avalanche Energy Rating (Eas)375 mJ
- Nominal Vgs4 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDD2670 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDD2670 Features
3.6 A, 200 V. RDS(ON) = 130 m? @ VGS = 10 V
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDD2670 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDD2670 Features
3.6 A, 200 V. RDS(ON) = 130 m? @ VGS = 10 V
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDD2670 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDD2670 More Descriptions
N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
The three parts on the right have similar specifications to FDD2670.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinContact PlatingResistanceVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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FDD2670ACTIVE (Last Updated: 6 days ago)4 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-632260.37mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2016e3yesActive1 (Unlimited)2SMD/SMTEAR99Tin (Sn)FET General Purpose Power200VMOSFET (Metal Oxide)GULL WING3.6A13.2W Ta 70W TcSingleENHANCEMENT MODE70mWDRAIN13 nsN-ChannelSWITCHING130m Ω @ 3.6A, 10V4.5V @ 250μA1228pF @ 100V3.6A Ta43nC @ 10V8ns10V±20V25 ns30 ns3.6A4V20V200V200V375 mJ4 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free---------------------------------- -
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)2--MATTE TIN--MOSFET (Metal Oxide)GULL WING-190W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING20m Ω @ 45A, 10V4V @ 250μA950pF @ 25V8A Ta 45A Tc19nC @ 10V-10V±20V-------50 mJ------ROHS3 Compliant-YESSINGLE260NOT SPECIFIED4R-PSSO-G2COMMERCIALSINGLE WITH BUILT-IN DIODE60VTO-252AA8A0.02Ohm60V--------------------
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ACTIVE (Last Updated: 6 days ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2002e3yesActive1 (Unlimited)2-EAR99-FET General Purpose Power150VMOSFET (Metal Oxide)GULL WING21A195W TcSingleENHANCEMENT MODE95WDRAIN8 nsN-ChannelSWITCHING66m Ω @ 7A, 10V4V @ 250μA1295pF @ 25V3.7A Ta 21A Tc25nC @ 10V19ns6V 10V±20V19 ns32 ns21A4V20V150V-59 mJ-2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-----R-PSSO-G2---TO-252AA---Tin66mOhm------------------
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-------------------------------------------------------------------------4V @ 250µA±20VMOSFET (Metal Oxide)TO-252AAAutomotive, AEC-Q101, PowerTrench®26 mOhm @ 36A, 10V75W (Tc)Tape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63-55°C ~ 175°C (TJ)Surface Mount800pF @ 25V17nC @ 10VN-Channel-10V60V7A (Ta), 36A (Tc)
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