Fairchild/ON Semiconductor FDD13AN06A0

Name: FDD13AN06A0
Brand: Fairchild/ON Semiconductor
SKU: 2478156-FDD13AN06A0
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD13AN06A0

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478156-FDD13AN06A0

Description:: MOSFET N-CH 60V 50A D-PAK

ECAD Model:

Datasheet:: FDD13AN06A0

Specifications

Fairchild/ON Semiconductor FDD13AN06A0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD13AN06A0.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
9.9A
Base Part Number
FDD13AN06
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
115W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
115W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.9A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Rise Time
77ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
50A
Threshold Voltage
4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Avalanche Energy Rating (Eas)
56 mJ
Nominal Vgs
4 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDM3622 Description
FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDM3622 is -55°C~150°C TJ and its maximum power dissipation is 2.1W. FDM3622 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of FDM3622 is 11 ns and its Turn-Off Delay Time is 35 ns.

FDM3622 Features
RDS(on) = 11.5m? (Typ.) @ VGS = 10V, ID = 50A
QG(tot) = 22nC (Typ.) @ VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101

FDM3622 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing

FDD13AN06A0 More Descriptions

Trans MOSFET N-CH 60V 9.9A Automotive 3-Pin(2 Tab) TO-252AA T/R
N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ
N-Channel 60 V 50 A 13 mOhm PowerTrench® Mosfet - DPAK
Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Product Comparison

The three parts on the right have similar specifications to FDD13AN06A0.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

Base Part Number

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDD13AN06A0

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2003

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

9.9A

FDD13AN06

R-PSSO-G2

1

115W Tc

Single

ENHANCEMENT MODE

115W

DRAIN

9 ns

N-Channel

SWITCHING

13.5m Ω @ 50A, 10V

4V @ 250μA

1350pF @ 25V

9.9A Ta 50A Tc

29nC @ 10V

77ns

6V 10V

±20V

25 ns

26 ns

50A

4V

TO-252AA

20V

60V

60V

56 mJ

4 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDD14AN06LA0

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

-

R-PSSO-G2

1

125W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

11.6m Ω @ 50A, 10V

3V @ 250μA

2.81pF @ 25V

9.5A Ta 50A Tc

32nC @ 5V

-

5V 10V

±20V

-

-

-

-

TO-252AA

-

-

-

55 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

YES

NOT SPECIFIED

SINGLE

NOT SPECIFIED

NOT SPECIFIED

4

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

9.5A

0.015Ohm

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD13AN06A0 vs FDD14AN06LA0
FDD107AN06LA0

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2004

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

25W Tc

-

-

-

-

-

N-Channel

-

91mOhm @ 10.9A, 10V

3V @ 250μA

360pF @ 25V

3.4A Ta 10.9A Tc

5.5nC @ 5V

-

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

-

-

-

TO-252AA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD13AN06A0 vs FDD107AN06LA0
FDD120AN15A0_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-252, (D-Pak)

Automotive, AEC-Q101, PowerTrench®

120 mOhm @ 4A, 10V

65W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 175°C (TJ)

Surface Mount

743pF @ 25V

14nC @ 10V

N-Channel

-

10V

150V

14A (Tc)

FDD13AN06A0 vs FDD120AN15A0_F085