Fairchild/ON Semiconductor FDD14AN06LA0

Name: FDD14AN06LA0
Brand: Fairchild/ON Semiconductor
SKU: 2488668-FDD14AN06LA0
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD14AN06LA0

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488668-FDD14AN06LA0

Description:: MOSFET N-CH 60V 50A D-PAK

ECAD Model:

Datasheet:: FDD14AN06LA0

Specifications

Fairchild/ON Semiconductor FDD14AN06LA0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD14AN06LA0.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
NOT SPECIFIED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
125W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.81pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.5A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
9.5A
Drain-source On Resistance-Max
0.015Ohm
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
55 mJ
RoHS Status
ROHS3 Compliant

Description

FDD14AN06LA0 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 55 mJ.A device's maximum input capacitance is 2.81pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 9.5A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

FDD14AN06LA0 Features
the avalanche energy rating (Eas) is 55 mJ
a 60V drain to source voltage (Vdss)

FDD14AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDD14AN06LA0 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

FDD14AN06LA0 More Descriptions

N-Channel Power Trench#174; MOSFET, 60V, 50A, 14mOhms
TRANS MOSFET N-CH 60V 9.5A 3PIN TO-252AA
MOSFET N-CH 60V 9.5A/50A TO252AA
Power Field-Effect Transistor, 9.5A I(D), 60V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
French Electronic Distributor since 1988
MOSFETs N-Channel PowerTrench

Product Comparison

The three parts on the right have similar specifications to FDD14AN06LA0.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Supplier Device Package

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

JESD-609 Code

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

View Compare
FDD14AN06LA0

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

yes

Obsolete

1 (Unlimited)

2

NOT SPECIFIED

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

125W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

11.6m Ω @ 50A, 10V

3V @ 250μA

2.81pF @ 25V

9.5A Ta 50A Tc

32nC @ 5V

60V

5V 10V

±20V

TO-252AA

9.5A

0.015Ohm

60V

55 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDD10AN06A0_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-252AA

Automotive, AEC-Q101, PowerTrench®

10.5 mOhm @ 50A, 10V

135W (Tc)

Original-Reel®

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 175°C (TJ)

Surface Mount

1840pF @ 25V

37nC @ 10V

N-Channel

-

10V

60V

11A (Ta)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD14AN06LA0 vs FDD10AN06A0_F085
FDD1600N10ALZD

Fairchild/ON Semiconductor

Surface Mount

TO-252-5, DPak (4 Leads Tab), TO-252AD

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

Last Time Buy

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

14.9W Tc

-

-

N-Channel

-

160mOhm @ 3.4A, 10V

2.8V @ 250μA

225pF @ 50V

6.8A Tc

3.61nC @ 10V

100V

5V 10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-252-4L

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD14AN06LA0 vs FDD1600N10ALZD
FDD10N20LZTM

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

yes

Active

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

-

GULL WING

-

-

-

R-PSSO-G2

-

1

-

83W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

360m Ω @ 3.8A, 10V

2.5V @ 250μA

585pF @ 25V

7.6A Tc

16nC @ 10V

-

5V 10V

±20V

TO-252AA

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 6 days ago)

11 Weeks

Surface Mount

3

260.37mg

e3

EAR99

FET General Purpose Power

Single

56W

10 ns

15ns

25 ns

55 ns

7.6A

20V

200V

2.39mm

6.73mm

6.22mm

No

FDD14AN06LA0 vs FDD10N20LZTM