Fairchild/ON Semiconductor FDD10AN06A0

Name: FDD10AN06A0
Brand: Fairchild/ON Semiconductor
SKU: 3070095-FDD10AN06A0
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD10AN06A0

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070095-FDD10AN06A0

Description:: MOSFET N-CH 60V 50A D-PAK

ECAD Model:

Datasheet:: FDD10AN06A0

Specifications

Fairchild/ON Semiconductor FDD10AN06A0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD10AN06A0.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
10.5MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
50A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Voltage
60V
Power Dissipation-Max
135W Tc
Element Configuration
Single
Current
50A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
135W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1840pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Rise Time
79ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
50A
Threshold Voltage
4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
429 mJ
Nominal Vgs
4 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDD10AN06A0 Description
N-Channel PowerTrench? MOSFET 60V, 50A, 10.5mΩ.The device is widely used in AC-DC Merchant Power Supply and AC-DC Merchant Power Supply - Servers & Workstations. FDD10AN06A0 Features RDS(on) = 9.4m? (Typ.) @ VGS = 10V, ID = 50A Qg(tot) = 28nC (Typ.) @ VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101

FDD10AN06A0 Applications
AC-DC Merchant Power Supply AC-DC Merchant Power Supply - Servers & Workstations AC-DC Merchant Power Supply - Desktop PC Other Industrial Other Consumer Electronics

FDD10AN06A0 More Descriptions

Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
N-Channel 60 V 10.5 mOhm Surface Mount PowerTrench Mosfet TO-252AA
Power Field-Effect Transistor, 11A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Resistor Networks, Arrays 200 ppm/°C 0804, Convex, Long Side Terminals 8 4 0Ohm 8 Jumper Tape & Reel (TR) Surface Mount RES ARRAY 4 RES ZERO OHM 0804
MOSFET, N CH, 60V, 50A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to FDD10AN06A0.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Published

Terminal Finish

View Compare
FDD10AN06A0

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

4.535924g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

10.5MOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

50A

R-PSSO-G2

1

60V

135W Tc

Single

50A

ENHANCEMENT MODE

135W

DRAIN

8 ns

N-Channel

SWITCHING

10.5m Ω @ 50A, 10V

4V @ 250μA

1840pF @ 25V

11A Ta 50A Tc

37nC @ 10V

79ns

6V 10V

±20V

32 ns

32 ns

50A

4V

TO-252AA

20V

60V

429 mJ

4 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
FDD16AN08A0_NF054

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

135W Tc

-

-

-

-

-

-

N-Channel

-

16mOhm @ 50A, 10V

4V @ 250μA

1.874pF @ 25V

9A Ta 50A Tc

47nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

DPAK

75V

-

-

FDD10AN06A0 vs FDD16AN08A0_NF054
FDD107AN06LA0

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

25W Tc

-

-

-

-

-

-

N-Channel

-

91mOhm @ 10.9A, 10V

3V @ 250μA

360pF @ 25V

3.4A Ta 10.9A Tc

5.5nC @ 5V

-

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-252AA

60V

2004

-

FDD10AN06A0 vs FDD107AN06LA0
FDD10N20LZTM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

11 Weeks

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

e3

yes

Active

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

-

83W Tc

Single

-

ENHANCEMENT MODE

56W

DRAIN

10 ns

N-Channel

SWITCHING

360m Ω @ 3.8A, 10V

2.5V @ 250μA

585pF @ 25V

7.6A Tc

16nC @ 10V

15ns

5V 10V

±20V

25 ns

55 ns

7.6A

-

TO-252AA

20V

200V

-

-

2.39mm

6.73mm

6.22mm

-

No

ROHS3 Compliant

-

-

-

-

Tin (Sn)

FDD10AN06A0 vs FDD10N20LZTM