Fairchild/ON Semiconductor FDC697P

Name: FDC697P
Brand: Fairchild/ON Semiconductor
SKU: 2490653-FDC697P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC697P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490653-FDC697P

Description:: MOSFET P-CH 20V 8A 6-SSOP

ECAD Model:

Datasheet:: FDC697P

Specifications

Fairchild/ON Semiconductor FDC697P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC697P.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2W Ta
Power Dissipation
2W
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
20m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3524pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8A Ta
Gate Charge (Qg) (Max) @ Vgs
55nC @ 4.5V
Rise Time
6ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
43 ns
Turn-Off Delay Time
119 ns
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
RoHS Status
RoHS Compliant

Description

FDC697P Description
FDC697P is a 1.8v P-Channel PowerTrench? MOSFET. This P-Channel 1.8V specified MOSFET FDC697P uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDC697P is in the SSOT-6 package with 2W power dissipation.

FDC697P Features
–8 A, –20 V RDS(ON) = 20 m? @ VGS = –4.5 V
RDS(ON) = 25 m? @ VGS = –2.5 V RDS(ON) = 35 m? @ VGS = –1.8 V High-performance trench technology for extremely low RDS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size

FDC697P Applications
USB Type C High-end Smartphones & Tablet PCs
Enterprise Computing and Telecom Equipment
Multifunction Printers
Fan Motor Drives
Battery management
Load Switch
Battery protection

FDC697P More Descriptions

Trans MOSFET P-CH 20V 8A 6-Pin SSOT FLMP T/R
P-Channel 1.8V PowerTrench MOSFET Recommend FDC697P_F077
P-Channel PowerTrench MOSFET -20V -8A SSOT-6 PBF
20V/8V, 22/25/35MO, PCH, SINGLE, SSOT6B, 160A GOX, PTII
8A, 20V, 0.02OHM, P-CHANNEL MOSF
POSCAP, POLYMER TANTALUM, TPE SE
MOSFET, P, SMD, FLMP, SSOT-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:8A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.8V; Case Style:SSOT-6 FLMP; Termination Type:SMD; Pins, No. of:6; Power Dissipation:2mW; Voltage, Vds:-20V; Voltage, Vgs th Max:-1.5V

Product Comparison

The three parts on the right have similar specifications to FDC697P.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Number of Elements

Power Dissipation-Max

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

RoHS Status

Supplier Device Package

Lifecycle Status

Factory Lead Time

Contact Plating

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Terminal Position

Terminal Form

Current Rating

Number of Channels

Element Configuration

Operating Mode

Turn On Delay Time

Transistor Application

Threshold Voltage

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

View Compare
FDC697P

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

6-SSOT Flat-lead, SuperSOT™-6 FLMP

6

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1

2W Ta

2W

P-Channel

20m Ω @ 8A, 4.5V

1.5V @ 250μA

3524pF @ 10V

8A Ta

55nC @ 4.5V

6ns

20V

1.8V 4.5V

±8V

43 ns

119 ns

8A

8V

-20V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDC602P_F095

Fairchild/ON Semiconductor

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2008

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

1.6W Ta

-

P-Channel

35mOhm @ 5.5A, 4.5V

1.5V @ 250μA

1456pF @ 10V

5.5A Ta

20nC @ 4.5V

-

20V

2.5V 4.5V

±12V

-

-

-

-

-

-

SuperSOT™-6

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDC697P vs FDC602P_F095
FDC653N

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-55°C~150°C TJ

Tape & Reel (TR)

-

1997

Active

1 (Unlimited)

MOSFET (Metal Oxide)

1

1.6W Ta

1.6W

N-Channel

35m Ω @ 5A, 10V

2V @ 250μA

350pF @ 15V

5A Ta

17nC @ 10V

12ns

-

4.5V 10V

±20V

12 ns

13 ns

5A

20V

30V

ROHS3 Compliant

-

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

30mg

SILICON

e3

yes

6

SMD/SMT

EAR99

35MOhm

FET General Purpose Power

30V

DUAL

GULL WING

5A

1

Single

ENHANCEMENT MODE

7.5 ns

SWITCHING

1.7V

5A

30V

150°C

1.7 V

1.1mm

3mm

1.7mm

No SVHC

No

Lead Free

-

-

-

FDC697P vs FDC653N
FDC642P

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

Active

1 (Unlimited)

MOSFET (Metal Oxide)

1

1.6W Ta

1.6W

P-Channel

65m Ω @ 4A, 4.5V

1.5V @ 250μA

925pF @ 10V

4A Ta

16nC @ 4.5V

7ns

20V

2.5V 4.5V

±8V

7 ns

120 ns

4A

8V

-20V

ROHS3 Compliant

-

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Tin

36mg

SILICON

e3

yes

6

-

EAR99

65mOhm

Other Transistors

-20V

DUAL

GULL WING

-4A

-

Single

ENHANCEMENT MODE

6 ns

SWITCHING

-600mV

4A

-

-

-

1mm

3mm

1.7mm

No SVHC

-

Lead Free

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

FDC697P vs FDC642P