Fairchild/ON Semiconductor FDC637AN

Name: FDC637AN
Brand: Fairchild/ON Semiconductor
SKU: 2478579-FDC637AN
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC637AN

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478579-FDC637AN

Description:: MOSFET N-CH 20V 6.2A SSOT-6

ECAD Model:

Datasheet:: FDC637AN

Specifications

Fairchild/ON Semiconductor FDC637AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC637AN.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
24mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
6.2A
Number of Elements
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 6.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1125pF @ 10V
Current - Continuous Drain (Id) @ 25°C
6.2A Ta
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
6.2A
Threshold Voltage
820mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Nominal Vgs
820 mV
Height
1mm
Length
3mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDC637AN Description

The FDC637AN is a 2.5V single N-channel MOSFET manufactured using the innovative PowerTrench? technology. It has been specifically designed to reduce ON-state resistance while maintaining a low gate charge for enhanced switching performance. When compared to larger SO-8 and TSSOP-8 packages, it is designed to provide superior power dissipation in a relatively tiny footprint. It can be used in DC-to-DC converters, load switching, and battery protection.
FDC637AN Features

6.2 A, 20 V. RDS(on) = 0.024 ? @ VGS = 4.5 V
RDS(on) = 0.032 ? @ VGS = 2.5 V
Fast switching speed
High performance Trench technology for extremely low RDS (ON)
10.5nC typical low gate charge
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC637AN Applications

DC/DC converter
Load switch
Battery Protection
Enterprise machine
Enterprise projectors

FDC637AN More Descriptions

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ
Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820Mv; Power Dissipation:1.6W; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC637AN.
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Product Comparison

The three parts on the right have similar specifications to FDC637AN.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Termination

Number of Channels

Drain Current-Max (Abs) (ID)

Dual Supply Voltage

Max Junction Temperature (Tj)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

View Compare
FDC637AN

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

1999

e3

yes

Active

1 (Unlimited)

6

EAR99

24mOhm

FET General Purpose Power

20V

MOSFET (Metal Oxide)

DUAL

GULL WING

6.2A

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

9 ns

N-Channel

SWITCHING

24m Ω @ 6.2A, 4.5V

1.5V @ 250μA

1125pF @ 10V

6.2A Ta

16nC @ 4.5V

13ns

2.5V 4.5V

±8V

13 ns

26 ns

6.2A

820mV

8V

20V

820 mV

1mm

3mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FDC602P_F095

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2008

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

1.6W Ta

-

-

-

-

P-Channel

-

35mOhm @ 5.5A, 4.5V

1.5V @ 250μA

1456pF @ 10V

5.5A Ta

20nC @ 4.5V

-

2.5V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SuperSOT™-6

20V

-

-

-

-

-

-

-

-

FDC637AN vs FDC602P_F095
FDC653N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

1997

e3

yes

Active

1 (Unlimited)

6

EAR99

35MOhm

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

5A

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

7.5 ns

N-Channel

SWITCHING

35m Ω @ 5A, 10V

2V @ 250μA

350pF @ 15V

5A Ta

17nC @ 10V

12ns

4.5V 10V

±20V

12 ns

13 ns

5A

1.7V

20V

30V

1.7 V

1.1mm

3mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

SMD/SMT

1

5A

30V

150°C

-

-

-

FDC637AN vs FDC653N
FDC642P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Tin

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

6

EAR99

65mOhm

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-4A

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

6 ns

P-Channel

SWITCHING

65m Ω @ 4A, 4.5V

1.5V @ 250μA

925pF @ 10V

4A Ta

16nC @ 4.5V

7ns

2.5V 4.5V

±8V

7 ns

120 ns

4A

-600mV

8V

-20V

-

1mm

3mm

1.7mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

20V

-

-

4A

-

-

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

FDC637AN vs FDC642P