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FDC636P

Fairchild/ON Semiconductor FDC636P

Part Number:
FDC636P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586678-FDC636P
Description:
MOSFET P-CH 20V 2.8A SSOT-6
ECAD Model:
Datasheet:
FDC636P

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Specifications
Fairchild/ON Semiconductor FDC636P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC636P.
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package
    SuperSOT™-6
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1998
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    1.6W Ta
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    130mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    390pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    8.5nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
Description
FDC636P   Description
  These P-channel logic level enhanced mode power field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process is particularly suitable for low-voltage applications, such as cellular phone and laptop power management and other battery-powered circuits, which require high-end switches and low line power consumption in a very small form factor surface mount package.   FDC636P   Features
-2.8A-20VRo=0.130Ω@Vs=-4.5V RDSN=0.180Ω @VGs=-2.5V SuperSOT -6 package design using copper lead frame for superior thermal and electrical capabilities High density cell design for extremely low RSION) Exceptional on-resistance and maximum DC current capability.   FDC636P    Applications
cellular phone and laptop power management other battery-powered circuits
FDC636P More Descriptions
Trans MOSFET P-CH 20V 2.8A 6-Pin SuperSOT T/R
Chip Resistor - Surface Mount 220Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ PANASONIC ERJPA3F2200V RESISTOR, ERJP, 220 OHM, 0603, 0.25W, 1%
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.8A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to FDC636P.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Series
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    View Compare
  • FDC636P
    FDC636P
    Fairchild/ON Semiconductor
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    SuperSOT™-6
    -55°C~150°C TJ
    Tape & Reel (TR)
    1998
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.6W Ta
    P-Channel
    130mOhm @ 2.8A, 4.5V
    1V @ 250μA
    390pF @ 10V
    2.8A Ta
    8.5nC @ 4.5V
    20V
    2.5V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDC602P_F095
    FDC602P_F095
    Fairchild/ON Semiconductor
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    SuperSOT™-6
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.6W Ta
    P-Channel
    35mOhm @ 5.5A, 4.5V
    1.5V @ 250μA
    1456pF @ 10V
    5.5A Ta
    20nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    PowerTrench®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDC636P vs FDC602P_F095
  • FDC653N
    FDC653N
    Fairchild/ON Semiconductor
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.6W Ta
    N-Channel
    35m Ω @ 5A, 10V
    2V @ 250μA
    350pF @ 15V
    5A Ta
    17nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    6
    30mg
    SILICON
    e3
    yes
    6
    SMD/SMT
    EAR99
    35MOhm
    FET General Purpose Power
    30V
    DUAL
    GULL WING
    5A
    1
    1
    Single
    ENHANCEMENT MODE
    1.6W
    7.5 ns
    SWITCHING
    12ns
    12 ns
    13 ns
    5A
    1.7V
    20V
    5A
    30V
    30V
    150°C
    1.7 V
    1.1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    FDC636P vs FDC653N
  • FDC642P
    FDC642P
    Fairchild/ON Semiconductor
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.6W Ta
    P-Channel
    65m Ω @ 4A, 4.5V
    1.5V @ 250μA
    925pF @ 10V
    4A Ta
    16nC @ 4.5V
    20V
    2.5V 4.5V
    ±8V
    PowerTrench®
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Tin
    Surface Mount
    6
    36mg
    SILICON
    e3
    yes
    6
    -
    EAR99
    65mOhm
    Other Transistors
    -20V
    DUAL
    GULL WING
    -4A
    1
    -
    Single
    ENHANCEMENT MODE
    1.6W
    6 ns
    SWITCHING
    7ns
    7 ns
    120 ns
    4A
    -600mV
    8V
    4A
    -20V
    -
    -
    -
    1mm
    3mm
    1.7mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    FDC636P vs FDC642P
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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