FDB2552

Fairchild/ON Semiconductor FDB2552

Part Number:
FDB2552
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2485035-FDB2552
Description:
MOSFET N-CH 150V 37A TO-263AB
ECAD Model:
Datasheet:
FDB2552

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Specifications
Fairchild/ON Semiconductor FDB2552 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB2552.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    36MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    37A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Voltage
    150V
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Current
    5A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    36m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta 37A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    51nC @ 10V
  • Rise Time
    29ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    29 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    37A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    11.33mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDB2552 Description
FDB2552 is a 150V N-Channel PowerTrench? MOSFET. The latest shielded gate PowerTrench? MOSFET FDB2552, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.  The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDB2552 is in the TO-263AB-3 package with 150W power dissipation.

FDB2552 Features
RDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A
Qg(tot) = 39nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)

FDB2552 Applications
DC/DC Converters 
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDB2552 More Descriptions
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Trans MOSFET N-CH 150V 5A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
Product Comparison
The three parts on the right have similar specifications to FDB2552.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Position
    Reach Compliance Code
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • FDB2552
    FDB2552
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    4.535924g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    36MOhm
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    260
    37A
    30
    R-PSSO-G2
    1
    150V
    150W Tc
    Single
    5A
    ENHANCEMENT MODE
    150W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    36m Ω @ 16A, 10V
    4V @ 250μA
    2800pF @ 25V
    5A Ta 37A Tc
    51nC @ 10V
    29ns
    6V 10V
    ±20V
    29 ns
    36 ns
    37A
    4V
    20V
    150V
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDB2670
    -
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    SILICON
    -65°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    -
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    -
    93W Tc
    -
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    130m Ω @ 10A, 10V
    4.5V @ 250μA
    1.32pF @ 100V
    19A Ta
    38nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    NOT SPECIFIED
    SINGLE
    unknown
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    200V
    19A
    0.13Ohm
    40A
    200V
    375 mJ
  • FDB20AN06A0
    -
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    -
    90W Tc
    -
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    20m Ω @ 45A, 10V
    4V @ 250μA
    950pF @ 25V
    9A Ta 45A Tc
    19nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    MATTE TIN
    SINGLE
    -
    4
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    45A
    0.02Ohm
    -
    60V
    50 mJ
  • FDB2572
    ACTIVE (Last Updated: 6 days ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    54MOhm
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    -
    29A
    -
    R-PSSO-G2
    1
    -
    135W Tc
    Single
    -
    ENHANCEMENT MODE
    135W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    54m Ω @ 9A, 10V
    4V @ 250μA
    1770pF @ 25V
    4A Ta 29A Tc
    34nC @ 10V
    14ns
    6V 10V
    ±20V
    14 ns
    31 ns
    29A
    -
    20V
    150V
    4.83mm
    10.67mm
    11.33mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    4A
    -
    -
    -
    36 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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