Fairchild/ON Semiconductor FDB2552
- Part Number:
- FDB2552
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2485035-FDB2552
- Description:
- MOSFET N-CH 150V 37A TO-263AB
- Datasheet:
- FDB2552
Fairchild/ON Semiconductor FDB2552 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB2552.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance36MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating37A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Voltage150V
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Current5A
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs36m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Ta 37A Tc
- Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
- Rise Time29ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)37A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Height4.83mm
- Length10.67mm
- Width11.33mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDB2552 Description
FDB2552 is a 150V N-Channel PowerTrench? MOSFET. The latest shielded gate PowerTrench? MOSFET FDB2552, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDB2552 is in the TO-263AB-3 package with 150W power dissipation.
FDB2552 Features
RDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A
Qg(tot) = 39nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
FDB2552 Applications
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDB2552 is a 150V N-Channel PowerTrench? MOSFET. The latest shielded gate PowerTrench? MOSFET FDB2552, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDB2552 is in the TO-263AB-3 package with 150W power dissipation.
FDB2552 Features
RDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A
Qg(tot) = 39nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
FDB2552 Applications
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDB2552 More Descriptions
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Trans MOSFET N-CH 150V 5A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
Trans MOSFET N-CH 150V 5A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
The three parts on the right have similar specifications to FDB2552.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionReach Compliance CodePin CountQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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FDB2552ACTIVE (Last Updated: 6 days ago)8 WeeksTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB34.535924gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2002e3yesActive1 (Unlimited)2EAR9936MOhmFET General Purpose Power150VMOSFET (Metal Oxide)GULL WING26037A30R-PSSO-G21150V150W TcSingle5AENHANCEMENT MODE150WDRAIN12 nsN-ChannelSWITCHING36m Ω @ 16A, 10V4V @ 250μA2800pF @ 25V5A Ta 37A Tc51nC @ 10V29ns6V 10V±20V29 ns36 ns37A4V20V150V4.83mm10.67mm11.33mmNo SVHCNoROHS3 CompliantLead Free--------------
-
----Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-65°C~175°C TJTape & Reel (TR)PowerTrench®--yesObsolete1 (Unlimited)2----MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIEDR-PSSO-G21-93W Tc--ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING130m Ω @ 10A, 10V4.5V @ 250μA1.32pF @ 100V19A Ta38nC @ 10V-10V±20V-----------ROHS3 Compliant-YESNOT SPECIFIEDSINGLEunknown3COMMERCIALSINGLE WITH BUILT-IN DIODE200V19A0.13Ohm40A200V375 mJ
-
----Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)2----MOSFET (Metal Oxide)GULL WING260-NOT SPECIFIEDR-PSSO-G21-90W Tc--ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING20m Ω @ 45A, 10V4V @ 250μA950pF @ 25V9A Ta 45A Tc19nC @ 10V-10V±20V-----------ROHS3 Compliant-YESMATTE TINSINGLE-4COMMERCIALSINGLE WITH BUILT-IN DIODE60V45A0.02Ohm-60V50 mJ
-
ACTIVE (Last Updated: 6 days ago)8 Weeks-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-1.31247gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2002e3yesActive1 (Unlimited)2EAR9954MOhmFET General Purpose Power150VMOSFET (Metal Oxide)GULL WING-29A-R-PSSO-G21-135W TcSingle-ENHANCEMENT MODE135WDRAIN11 nsN-ChannelSWITCHING54m Ω @ 9A, 10V4V @ 250μA1770pF @ 25V4A Ta 29A Tc34nC @ 10V14ns6V 10V±20V14 ns31 ns29A-20V150V4.83mm10.67mm11.33mm-NoROHS3 CompliantLead Free-Tin (Sn)------4A---36 mJ
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