Fairchild/ON Semiconductor FDB2532

Name: FDB2532
Brand: Fairchild/ON Semiconductor
SKU: 3554234-FDB2532
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDB2532

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3554234-FDB2532

Description:: MOSFET N-CH 150V 79A D2PAK

ECAD Model:

Datasheet:: FDB2532

Specifications

Fairchild/ON Semiconductor FDB2532 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB2532.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
16MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
79A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Voltage
150V
Power Dissipation-Max
310W Tc
Element Configuration
Single
Current
79A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs
107nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
79A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Avalanche Energy Rating (Eas)
400 mJ
Nominal Vgs
4 V
Height
4.83mm
Length
10.67mm
Width
11.33mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDB2532 Description The MC78LXXA / LM78LXXA series of fixed-voltage monolithic integrated-circuit voltage regulators are suitable for applications that require supply current up to 100 mA.

FDB2532 Features Maximum Output Current of 100 mA Output Voltage of 5 V, 6 V, 8 V, 12 V, and 15 V Thermal Overload Protection Short-Circuit Current Limiting Output Voltage Offered in ±5% Tolerance

FDB2532 Applications This product is general usage and suitable for many different applications. DC/DC Converters Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier

FDB2532 More Descriptions

Trans MOSFET N-CH 150V 8A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 150V 79A D2PAK
N-Channel 150 V 0.075 Ohm Surface Mount PowerTrench Mosfet - D2PAK-3
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
Transistor, N-channel, PowerTrench MOSFET, N-channel, 150V, 79A, 16mOhm | ON Semiconductor FDB2532
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Chip Resistor - Surface Mount 40.2Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 40.2 OHM 1% 1/10W 0402
MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-263AB; Power Dissipation Pd:310W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to FDB2532.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDB2532

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

4.535924g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2002

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

16MOhm

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

79A

R-PSSO-G2

1

150V

310W Tc

Single

79A

ENHANCEMENT MODE

310W

DRAIN

16 ns

N-Channel

SWITCHING

16m Ω @ 33A, 10V

4V @ 250μA

5870pF @ 25V

8A Ta 79A Tc

107nC @ 10V

30ns

6V 10V

±20V

17 ns

39 ns

79A

4V

20V

150V

150V

400 mJ

4 V

4.83mm

10.67mm

11.33mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDB2670

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

-

93W Tc

-

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

130m Ω @ 10A, 10V

4.5V @ 250μA

1.32pF @ 100V

19A Ta

38nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

375 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

YES

NOT SPECIFIED

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

200V

19A

0.13Ohm

40A

200V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB2532 vs FDB2670
FDB20AN06A0

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

-

90W Tc

-

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

20m Ω @ 45A, 10V

4V @ 250μA

950pF @ 25V

9A Ta 45A Tc

19nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

50 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

YES

MATTE TIN

SINGLE

260

-

NOT SPECIFIED

4

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

60V

45A

0.02Ohm

-

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB2532 vs FDB20AN06A0
FDB2552_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D²PAK (TO-263AB)

Automotive, AEC-Q101, PowerTrench®

36 mOhm @ 16A, 10V

150W (Tc)

Original-Reel®

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 175°C (TJ)

Surface Mount

2800pF @ 25V

51nC @ 10V

N-Channel

-

10V

150V

5A (Ta), 37A (Tc)

FDB2532 vs FDB2552_F085