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FDB045AN08A0

Fairchild/ON Semiconductor FDB045AN08A0

Part Number:
FDB045AN08A0
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813634-FDB045AN08A0
Description:
MOSFET N-CH 75V 90A D2PAK
ECAD Model:
Datasheet:
FDB045AN08A0

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Specifications
Fairchild/ON Semiconductor FDB045AN08A0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB045AN08A0.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    11 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    1.31247g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    4.5MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    75V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    19A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    310W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    310W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 80A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta 90A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    138nC @ 10V
  • Rise Time
    88ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    45 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    80A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    75V
  • Avalanche Energy Rating (Eas)
    600 mJ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    11.33mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDB045AN08A0 Description
Advanced processing techniques are used in ON semiconductor technology to achieve ultra-low on-resistance per silicon area. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.

FDB045AN08A0 Features
?Roson>=3.9 millimeters (Typ.) ID = 80 A @ Vgs=10 V
?Vgs = 10 V, Qgw = 92 nC (Typ.)
?Miller Charge is Low
?Body Diode with Low Qa
?Usability of UIS (Single Pulse and Repetitive Pulse)

FDB045AN08A0 Applications
?Atx/Server/Telecom PSU Synchronous Rectification
?Battery Protection Circuit (BPC) is a circuit that protects the battery
?Uninterruptible Power Supplies and Motor Drives
FDB045AN08A0 More Descriptions
N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ
Trans MOSFET N-CH 75V 80A 3-Pin(2 Tab) D2PAK T/R
Trans MOSFET N-CH 75V 80A 3-Pin(2 Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Al
Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263AB; Power Dissipation Pd:310W; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to FDB045AN08A0.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Terminal Finish
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    HTS Code
    View Compare
  • FDB045AN08A0
    FDB045AN08A0
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    11 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    4.5MOhm
    FET General Purpose Power
    75V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    19A
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    310W Tc
    Single
    ENHANCEMENT MODE
    310W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    4.5m Ω @ 80A, 10V
    4V @ 250μA
    6600pF @ 25V
    19A Ta 90A Tc
    138nC @ 10V
    88ns
    6V 10V
    ±20V
    45 ns
    40 ns
    80A
    4V
    20V
    75V
    600 mJ
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDB031N08
    FDB031N08
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.762g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    3.1MOhm
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    -
    -
    R-PSSO-G2
    -
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    230 ns
    N-Channel
    SWITCHING
    3.1m Ω @ 75A, 10V
    4.5V @ 250μA
    15160pF @ 25V
    120A Tc
    220nC @ 10V
    191ns
    10V
    ±20V
    121 ns
    335 ns
    235A
    -
    20V
    75V
    -
    4.83mm
    10.67mm
    11.33mm
    -
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    940A
    No
    -
    -
    -
    FDB045AN08A0 vs FDB031N08
  • FDB039N06
    FDB039N06
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    231W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    3.9mOhm @ 75A, 10V
    4.5V @ 250μA
    8.235pF @ 25V
    120A Tc
    133nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    TO-263
    60V
    -
    FDB045AN08A0 vs FDB039N06
  • FDB0260N1007L
    FDB0260N1007L
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    7
    1.312g
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    not_compliant
    -
    NOT SPECIFIED
    -
    -
    -
    3.8W Ta 250W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    2.6m Ω @ 27A, 10V
    4V @ 250μA
    8545pF @ 50V
    200A Tc
    118nC @ 10V
    -
    10V
    ±20V
    -
    -
    200A
    2.8V
    -
    -
    -
    -
    -
    -
    No SVHC
    ROHS3 Compliant
    -
    Tin (Sn)
    -
    -
    -
    100V
    8541.29.00.95
    FDB045AN08A0 vs FDB0260N1007L
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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